Related papers: Nonvolatile memory with molecule-engineered tunnel…
A new spintronic nonvolatile memory cell analogous to 1T DRAM with non-destructive read is proposed. The cells can be used as neural computing units. A dual-circuit neural network architecture is proposed to leverage these devices against…
Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in…
Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing significant limitations as device scaling reaches the limits of Moore's Law. These…
This report is a brief review of the recent work on architectures for the prospective hybrid CMOS/nanowire/ nanodevice ("CMOL") circuits including digital memories, reconfigurable Boolean-logic circuits, and mixed-signal neuromorphic…
Deep Learning neural networks are pervasive, but traditional computer architectures are reaching the limits of being able to efficiently execute them for the large workloads of today. They are limited by the von Neumann bottleneck: the high…
Scalable implementation of quantum networks and photonic processors require integrated photonic memories with high efficiency, yet current integrated systems have been limited to storage efficiencies below 27.8%. Here, we demonstrate highly…
Performance improvements are expected from integration of photonic devices into information processing systems, and in particular, all-optical memories provide a key functionality. Scaling down the size of memory elements is desirable for…
Work is devoted to physics of current transport in a wide class of the hetero-phase granulated mediums and similar systems with set of metal or semi-conductor granules, quantum dots or potential wells in which the exit from Coulomb blockade…
The conductance of C60 on Cu(100) is investigated with a low-temperature scanning tunneling microscope. At the transition from tunneling to the contact regime the conductance of C60 adsorbed with a pentagon-hexagon bond rises rapidly to…
Quantum memories are essential for photonic quantum technologies, enabling long-distance quantum communication and serving as delay units in quantum computing. Hot atomic vapors using electromagnetically induced transparency provide a…
In recent years, neuromorphic computing has gained attention as a promising approach to enhance computing efficiency. Among existing approaches, neurotransistors have emerged as a particularly promising option as they accurately represent…
The geometrical and performance scaling of silicon CMOS integrated circuit technology over the past 50 years has enabled many affordable new products for business and consumer applications. Recognizing that Flash is approaching its ultimate…
Spin-orbitronics, based on both spin and orbital angular momentum, presents a promising pathway for energy-efficient memory and logic devices. Recent studies have demonstrated the emergence of orbital currents in light transition metals…
In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission…
In a recent publication, we demonstrated electrical spin injection and detection in n-type silicon at temperatures up to 500K using ferromagnetic metal / SiO2 tunnel barrier contacts in a three-terminal geometry (Nature Commun. 2:245…
In our earlier work [Appl. Phys. Lett. 92, 022509 (2008)], we proposed nonvolatile vortex random access memory (VRAM) based on the energetically stable twofold ground state of vortex-core magnetizations as information carrier. Here we…
The quantum mechanical tunnelling process conserves the quantum properties of the particle considered. As applied to solid-state tunnelling (SST), this physical law was verified, within the field of spintronics, regarding the electron spin…
Recently we have predicted [Phys. Rev. Lett. May 2005(cond-mat/0504694)] that Ti-decorated carbon nanotubes can absorb up to 8-wt% hydrogen at ambient conditions. Here we show that similar phenomena occurs in light transition-metal…
Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap…
Quantum memories promise to enable global quantum repeater networks. For field applications, alkali metal vapors constitute an exceptional storage platform, as neither cryogenics, nor strong magnetic fields are required. We demonstrate a…