Related papers: Spin inversion devices with Fano anti-resonances
Spin transport phenomena at strongly-correlated interfaces play central roles in fundamental physics as well as spintronic applications. To anatomize spin-transport carriers, we propose the detection of the spin current noise in interacting…
The conversion of spin information into electrical signals is indispensable for spintronic technologies. Spin-to-charge conversion in ferromagnetic tunnel contacts is well-described using linear (spin-)transport equations, provided that…
Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It…
We consider a correlated wavefunction including particle-hole pairing at half a reciprocal lattice vector for itinerant electrons hopping on a square lattice in two dimensions and subject both to on-site and nearest-neighbor repulsion. We…
Materials with spin-orbit coupling are of great interest for various spintronics applications due to the efficient electrical generation and detection of spin-polarized electrons. Over the past decade, many materials have been studied,…
$\text{RuO}_2$, a transition metal oxide, is attracting attention in spintronics for its unique altermagnetic properties, which influence spin currents. Its ability to produce large spin-orbit torques and spin Hall effects is key for…
We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with…
First-principles density-functional theory calculations show switching magnetization by 90 degree can be achieved in ultrathin BFO film by applying external electric-field. Up-spin carriers appear to the surface with positive field while…
Spin-controlled lasers are highly interesting photonic devices and have been shown to provide ultra-fast polarization dynamics in excess of 200 GHz. In contrast to conventional semiconductor lasers their temporal properties are not limited…
A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin…
Spintronics, which aims at exploiting the spin degree of freedom of carriers inside electronic devices, has a huge potential for quantum computation and dissipationless interconnects. Ideally, spin currents in spintronic devices should be…
We propose a spin valve device based on the interplay of a modulated spin-orbit interaction and a uniform external magnetic field acting on a quantum wire. Half-metal phases, where electrons with only a selected spin polarization exhibit…
A superconducting double spin valve device is proposed. Its operation takes advantage of the interplay between the spin-filtering effect of ferromagnetic insulators and superconductivity-induced out-of-equilibrium transport. Depending on…
Ballistic spin transport through waveguides, with symmetric or asymmetric double stubs attached to them periodically, is studied systematically in the presence of a weak spin-orbit coupling that makes the electrons precess. By an…
We propose an efficient spin filter including an antidot fabricated on semiconductor heterostructures with strong spin-orbit interaction. The antidot creates a tunable potential on two-dimensional electron gas in the heterostructures, which…
We propose a possible experimental setup for nonreciprocal electron transport in a lateral spin valve due to noncoplanar distribution of magnetic moment (and field) in the system. Some metals (Al, Cu) and semiconductors (GaAs, InSb etc.)…
We study locally gated silicene nanoribbons as spin active devices. We find that the gated segments of nanoribbons with zigzag edge can be used to perform a spin inversion for the electron spins injected with an in-plane orientation. The…
We compute the zero bias conductance of electrons through a single ballistic channel weakly coupled to a side quantum dot with Coulomb interaction. In contrast to the standard setup which is designed to measure the transport through the…
Spin waves in magnetic materials are promising information carriers for future computing technologies due to their ultra-low energy dissipation and long coherence length. Antiferromagnets are strong candidate materials due, in part, to…
A nanodevice consisting of a conductive cylinder in an axial magnetic field with one-dimensional wires attached to its lateral surface is considered. An explicit form for transmission and reflection coefficients of the system as a function…