Related papers: Inter-Layer Screening Length to Electric Field in …
We propose a concept for superconducting electric field-effect devices based on superconducting films sandwiched between ferroelectric layers. We provide theoretical calculations that indicate how the field effect in these devices could be…
First-principles calculations of the electronic structure and vibrational modes, in a system of graphene bilayers and trilayers intercalated with alkaline earth atoms, are resented. It is found that, in similarity to the case of…
The coherent, interlayer resistance of a misoriented, rotated interface between two stacks of AB graphite is determined for a variety of misorientation angles. The quantum-resistance of the ideal AB stack is on the order of 1 to 10 m$\Omega…
Two-dimensional (2D) materials represented by graphene stand out in future electrical industry and have been widely studied. As a commonly existing factor in electronic devices, the electric field has been extensively utilized to modulate…
Gate-tunable spin-dependent properties could be induced in graphene at room temperature through magnetic proximity effect by placing it in contact with a metallic ferromagnet. Because strong chemical bonding with the metallic substrate…
The nanometer-scale size-dependent electronic transport properties of crystalline (c-) and amorphous (a-) germanium telluride (GeTe) ultrathin films sandwiched by titanium nitride (TiN) electrodes are investigated using ab initio molecular…
Interfacial electron-phonon coupling in ultrathin films has attracted much interest; it can give rise to novel effects and phenomena, including enhanced superconductivity. Here we report an observation of strong kinks in the energy…
Recent numerical studies have demonstrated the possibility of achieving substantial enhancements in the transmission of transverse-electric-polarized electromagnetic fields through subwavelength slits in a thin metallic screen by placing…
Interlayer electron transport through a graphene / hexagonal boron-nitride (h-BN) / graphene heterostructure is strongly affected by the misorientation angle $\theta$ of the h-BN with respect to the graphene layers with different physical…
We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET), using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at…
Rhombohedral graphite features peculiar electronic properties, including persistence of low-energy surface bands of a topological nature. Here, we study the contribution of electron-hole excitations towards inelastic light scattering in…
By taking into account the full four band energy spectrum, we calculate the transmission probability and conductance of electrons across symmetric and asymmetric double potential barrier with a confined interlayer potential difference in…
Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity…
Control over minivalley polarization and interlayer coupling is demonstrated in double bilayer graphene twisted with an angle of 2.37$^\circ$. This intermediate angle is small enough for the minibands to form and large enough such that the…
Screening is a ubiquitous phenomenon through which the polarization of bound or mobile charges tends to reduce the strengths of electric fields inside materials. Here we show how photoexcitation can be used as a knob to transform…
Graphene is a two-dimensional (2D) semimetal with high mobility in charge carriers due to the existence of Dirac points. Silicene is another promising material, with properties analog to graphene. Many silicon (Si) based electronic devices…
Spin-polarized electrical transport is investigated in $ Al_{2}O_{3}/Ni_{80}Fe_{20}/Al_{2}O_{3}$ thin films for permalloy thickness between 6 and 20nm. The degree of spin-polarization of the current flowing in the plane of the film is…
We report a new method for quantitative estimation of graphene layer thicknesses using high contrast imaging of graphene films on insulating substrates with a scanning electron microscope. By detecting the attenuation of secondary electrons…
We demonstrate a flip-chip device for performing low-temperature acoustoelectric measurements on exfoliated two-dimensional materials. With this device, we study gate-tunable acoustoelectric transport in an exfoliated monolayer graphene…
We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by the physical gate oxide thickness and not the effective oxide…