Related papers: Transport in suspended graphene
Using the self-consistent Born approximation to the Dirac fermions under finite-range impurity scatterings, we show that the current-current correlation function is determined by four-coupled integral equations. This is very different from…
Graphene grown via chemical vapour deposition (CVD) on copper foil has emerged as a high-quality, scalable material, that can be easily integrated on technologically relevant platforms to develop promising applications in the fields of…
Two-dimensional Dirac fermions are used to discuss quasiparticles in graphene in the presence of impurity scattering. Transport properties are completely dominated by diffusion. This may explain why recent experiments did not find weak…
We investigate the transport of electrons in disordered and pristine graphene devices. Fano shot noise, a standard metric to assess the mechanism for electronic transport in mesoscopic devices, has been shown to produce almost the same…
Detailed experimental and theoretical studies of the temperature dependence of the effect of different scattering mechanisms on electrical transport properties of graphene devices are presented. We find that for high mobility devices the…
We study the DC transport of finite graphene samples with random gap. Using Dirac fermions to describe the low-energy physics near the Dirac point, we employ a generalized Drude form for the conductivity. The latter is constant for a…
The resistivity of ultra-clean suspended graphene is strongly temperature dependent for 5K<T<240K. At T~5K transport is near-ballistic in a device of ~2um dimension and a mobility ~170,000 cm^2/Vs. At large carrier density, n>0.5*10^11…
In this research work, roll-to-roll chemical vapor deposited graphene device electronic transport properties are benchmarked to elucidate and comprehend mobility degradation in the real-world commercial application of graphene devices.…
Conductivity of a disorder-free intrinsic graphene is studied to the first order in the long-range Coulomb interaction and is found to be \sigma=\sigma_0(1+0.01 g), where 'g' is the dimensionless ("fine structure") coupling constant. The…
Experimentally produced graphene sheets exhibit a wide range of mobility values. Both extrinsic charged impurities and intrinsic ripples (corrugations) have been suggested to induce long-range disorder in graphene and could be a candidate…
There is an increasing amount of literature concerning electronic properties of graphene close to the neutrality point. Many experiments continue using the two-probe geometry or invasive contacts or do not control samples' macroscopic…
The aim of this work is to simulate the charge transport in a monolayer graphene on different substrates. This requires the inclusion of the scatterings of the charge carriers with the impurities and the phonons of the substrate, besides…
We develop a first-principles theory of resonant impurities in graphene and show that a broad range of typical realistic impurities leads to the characteristic sublinear dependence of the conductivity on the carrier concentration. By means…
We present a study of transport in graphene devices on polar insulating substrates by solving the Bolzmann transport equation in the presence of graphene phonon, surface polar phonon, and Coulomb charged impurity scattering. The value of…
Applying a quasiclassical equation to carriers in graphene we found a way how to distinguish between samples with the domination of short and long range scatterers from the conductivity measurements. The model proposed explains recent…
We introduce a new scheme to realize suspended, multi-terminal graphene structures that can be current annealed successfully to obtain uniform, very high quality devices. A key aspect is that the bulky metallic contacts are not connected…
Graphene supported on a transition metal dichalcogenide substrate offers a novel platform to study the spin transport in graphene in presence of a substrate induced spin-orbit coupling, while preserving its intrinsic charge transport…
We investigate transport in graphene supported on various dielectrics (SiO2, BN, Al2O3, HfO2) through a hydrodynamic model which includes self-heating and thermal coupling to the substrate, scattering with ionized impurities, graphene…
Substrate plays a crucial role in determining transport and low frequency noise behavior of graphene field effect devices. Typically, heavily dope Si/SiO$_2$ substrate is used to fabricate these devices for efficient gating.…
We calculate the temperature dependent conductivity of graphene in the presence of randomly distributed Coulomb impurity charges arising from the temperature dependent screening of the Coulomb disorder without any phonons. The purely…