We investigate transport in graphene supported on various dielectrics (SiO2, BN, Al2O3, HfO2) through a hydrodynamic model which includes self-heating and thermal coupling to the substrate, scattering with ionized impurities, graphene phonons and dynamically screened interfacial plasmon-phonon (IPP) modes. We uncover that while low-field transport is largely determined by impurity scattering, high-field transport is defined by scattering with dielectric-induced IPP modes, and a smaller contribution of graphene intrinsic phonons. We also find that lattice heating can lead to negative differential drift velocity (with respect to the electric field), which can be controlled by changing the underlying dielectric thermal properties or thickness. Graphene on BN exhibits the largest high-field drift velocity, while graphene on HfO2 has the lowest one due to strong influence of IPP modes.
@article{arxiv.1406.4525,
title = {Theoretical analysis of high-field transport in graphene on a substrate},
author = {Andrey Y. Serov and Zhun-Yong Ong and Massimo V. Fischetti and Eric Pop},
journal= {arXiv preprint arXiv:1406.4525},
year = {2014}
}