Related papers: Anisotropic modification of the effective hole $g$…
Two-dimensional (2D) electrons in an in-plane magnetic field become fully spin polarized above a field B_P, which we can determine from the in-plane magnetoresistance. We perform such measurements in modulation-doped AlAs electron systems,…
A theoretical prediction of the spin-dependent electron self-energy and in-plane transport of a two-dimensional electron gas in proximity with a ferromagnetic gate is presented. The application of the predicted spin-dependent properties is…
The electron spin resonance (ESR) of two-dimensional electrons is investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR resonance frequency can be turned by means of a gate voltage. The front and back gates of the…
Experiments on a constant-density two-dimensional hole system in a GaAs quantum well reveal that the metallic behavior observed in the zero-magnetic-field temperature dependence of the resistivity depends on the symmetry of the confinement…
We study the role of anisotropy on the transport properties of composite fermions near Landau level filling factor $\nu=1/2$ in two-dimensional holes confined to a GaAs quantum well. By applying a parallel magnetic field, we tune the…
Time- and spatially-resolved Faraday rotation spectroscopy is used to measure the magnitude and direction of the momentum-dependent spin splitting in strained InGaAs epilayers. The epilayers are lattice-matched to the GaAs substrate and…
We measure the effective Lande g-factor of high-mobility two-dimensional electrons in a modulation-doped AlAs quantum well by tilting the sample in a magnetic field and monitoring the evolution of the magnetoresistance oscillations. The…
We explore spin dynamics in Cu(1,3-bdc), a quasi-2D topological magnon insulator. The results show that the thermal evolution of Land\'e $g$-factor ($g$) is anisotropic: $g_\textrm{in-plane}$ reduces while $g_\textrm{out-plane}$ increases…
Spin-dependent tunneling through an indirect bandgap barrier like the GaAs/AlAs/GaAs heterostructure along [001] direction is studied by the tight-binding method. The tunneling is characterized by the proportionality of the Dresselhaus…
We investigate the effect of the anisotropic spin-spin interaction on the ground state density distribution of the one dimensional spin-1 bosonic gases within a modified Gross-Pitaevskii theory both in the weakly interaction regime and in…
We have found that Fermi contours of a two-dimensional electron gas at $\rmGaAs/Al_xGa_{1-x}As$ interface deviate from a standard circular shape under the combined influence of an approximately triangular confining potential and the strong…
We study the effects of magnetic and electric fields on the g-factors of spins confined in a two-electron InAs nanowire double quantum dot. Spin sensitive measurements are performed by monitoring the leakage current in the Pauli blockade…
We use an aluminium single electron transistor with a magnetic gate to directly quantify the chemical potential anisotropy of GaMnAs materials. Uniaxial and cubic contributions to the chemical potential anisotropy are determined from field…
We study a possible mechanism of the switching of the magnetic easy axis as a function of hole concentration in (Ga,Mn)As epilayers. In-plane uniaxial magnetic anisotropy along [110] is found to exceed intrinsic cubic magnetocrystalline…
We investigate the effect of the filling factor on transport anisotropies, known as stripes, in high Landau levels of a two-dimensional electron gas. We find that at certain in-plane magnetic fields, the stripes orientation is sensitive to…
Spin dynamics of two-dimensional electron gas confined in an asymmetrical quantum well is studied theoretically in the regime where the scattering frequency is comparable with the spin precession frequency due to the conduction band spin…
We study the transport properties of a 2D electron gas in narrow GaAs quantum wells with AlAs/GaAs superlattice barriers. It is shown that the anisotropic positive magnetoresistance observed in selectively doped semiconductor structures in…
In a two-dimensional quantum dot in a GaAs heterostructure, the spin-orbit scattering rate is substantially reduced below the rate in a bulk two-dimensional electron gas [B.I. Halperin et al, Phys. Rev. Lett. 86, 2106 (2001)]. Such a…
We have investigated spin and carrier dynamics of resident holes in high-mobility two-dimensional hole systems in GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum wells at temperatures down to 400 mK. Time-resolved Faraday and Kerr rotation, as…
We provide a theoretical framework for the electric field control of the electron spin in systems with diffusive electron motion. The approach is valid in the experimentally important case where both intrinsic and extrinsic spin-orbit…