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Related papers: Gold nanoparticle-pentacene memory-transistors

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We study sequential tunneling of magnetic excitations in nonitinerant systems (either magnons or spinons) through triangular molecular magnets. It is known that the quantum state of such molecular magnets can be controlled by application of…

Mesoscale and Nanoscale Physics · Physics 2013-07-30 Kevin A. van Hoogdalem , Daniel Loss

Memristive devices have been considered promising candidates for nature-inspired computing and in-memory information processing. However, experimental devices developed to date typically show significant variability and function at…

Applied Physics · Physics 2025-08-25 Yuriy V. Pershin , Liya Patel , Bapi Berra , Doug Aaron , Stephen A. Sarles

We report the chemical synthesis of Fe-core/Au-shell nanoparticles by a reverse micelle method, and the investigation of their growth mechanisms and oxidation-resistant characteristics. The core-shell structure and the presence of the Fe &…

In recent years, thin-film organic field-effect transistors (OFETs) have begun to be considered as a possible alternative to the hydrogenated amorphous silicon thin-film transistors (a-Si:H TFT's) used in active matrix flat panel displays…

Achieving tunability of two dimensional (2D) transition metal dichalcogenides (TMDs) functions calls for the introduction of hybrid 2D materials by means of localized interactions with zero dimensional (0D) materials. A metal-semiconductor…

Mesoscale and Nanoscale Physics · Physics 2014-06-25 Udai Bhanu , Muhammad R. Islam , Laurene Tetard , Saiful I. Khondaker

The spin-memory effect in the GaAs / InGaAs heterostructures with $\delta$<Mn> layer in GaAs barrier have been investigated. The effect consists in spin polarization of Mn atoms due to interaction with photogenerated spin-polarized holes.…

In this paper, we propose a Junctionless (JL)/Accumulation Mode (AM) transistor with an access transistor (JL in series with JL/AM transistor) based capacitorless Dynamic Random Access Memory (1TDRAM) cell. The JL transistor overcomes the…

Mesoscale and Nanoscale Physics · Physics 2023-09-06 Md. Hasan Raza Ansari , Jawar Singh

The rapid development of artificial intelligence (AI), Internet of Things (IoT), and edge computing applications has posed severe challenges to conventional memory technologies in terms of density, speed, and energy consumption. Herein, a…

Nanocomposite thin films formed by gold nanoparticles embedded in a nickel oxide matrix have been synthesized by a new variation of the pulsed laser deposition technique. Two actively synchronized laser sources, a KrF excimer laser at 248…

Materials Science · Physics 2013-04-19 I. Fasaki , M. Kandyla , M. Kompitsas

We present a simple but powerful method to determine the thicknesses of the accumulation and depletion layers and the distribution curve of injected carriers in organic field effect transistors. The conductivity of organic semiconductors in…

Materials Science · Physics 2009-11-10 Manabu Kiguchi , Manabu Nakayama , Kohei Fujiwara , Keiji Ueno , Toshihiro Shimada , Koichiro Saiki

Gold nanoparticles (GNPs) constitute a breakthrough in modern chemistry. The recent success in the synthesis and total structure determination of the precise-composition GNPs provides exciting opportunities for fundamental studies and…

Materials Science · Physics 2015-02-05 Vitaly Chaban

Tens of graphene transistors with nanoperforated channels and different channel lengths were fabricated at the wafer scale. The nanoholes have a central diameter of 20 nm and a period of 100 nm, the lengths of the channel being of 1, 2, 4…

Mesoscale and Nanoscale Physics · Physics 2018-03-14 Mircea Dragoman , Adrian Dinescu , Daniela Dragoman

We demonstrate an all solid state semiconductor device, based on epitaxial single crystalline metal halide perovskites, enabling reversible control of a perovskite photoluminescence with a gate voltage. Fundamentally distinct from…

Materials Science · Physics 2026-03-27 Vladimir Bruevich , Dmitry Maslennikov , Beier Hu , Artem A. Bakulin , Vitaly Podzorov

We show in this paper that it is possible to induce superconducting vortices in a gold nanowire connected to superconducting electrodes. The gold nanowire acquires superconductivity by the proximity effect. The differential…

Superconductivity · Physics 2015-05-27 Lin He , Jian Wang

Using molecular dynamics simulations, we show that, when subject to a periodic external electric field, a nanopore in ionic solution acts as a capacitor with memory (memcapacitor) at various frequencies and strengths of the electric field.…

Soft Condensed Matter · Physics 2010-07-20 Matt Krems , Yuriy V. Pershin , Massimiliano Di Ventra

In this work, an optimized method was implemented for attaining stable multibit operation with low energy consumption in a two-terminal memory element made from the following layers: Ag/Pt nanoparticles (NPs)/SiO2/TiN in a…

Hardware Architecture · Computer Science 2024-06-21 G. Kleitsiotis , P. Bousoulas , S. D. Mantas , C. Tsioustas , I. A. Fyrigos , G. Sirakoulis , D. Tsoukalas

Flexible solution processed memristors show different behaviour dependent on the choice of electrode material. Use of gold for both electrodes leads to switchable WORM (Write Once Read Many times) resistive devices. Use of aluminium for…

Materials Science · Physics 2013-12-24 Ella Gale , David Pearson , Stephen Kitson , Andrew Adamatzky , Ben de Lacy Costello

We report on the fabrication and characterization of single crystal field-effect transistors (FETs) based on diphenylbenzo diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode…

Materials Science · Physics 2009-11-10 R. Zeis , Ch. Kloc , K. Takimiya , Y. Kunugi , Y. Konda , N. Niihara , T. Otsubo

We studied the influence of oxygen on the electronic trap states in a pentacene thin film. This was done by carrying out gated four-terminal measurements on thin-film transistors as a function of temperature and without ever exposing the…

Materials Science · Physics 2009-12-21 Wolfgang L. Kalb , Kurt Mattenberger , Bertram Batlogg

We study field-effect transistors realized from VO2 nanobeams with HfO2 as the gate dielectric. When heated up from low to high temperatures, VO2 undergoes an insulator-to-metal transition. We observe a change in conductance (~ 6 percent)…

Strongly Correlated Electrons · Physics 2011-09-30 Shamashis Sengupta , Kevin Wang , Kai Liu , Ajay K. Bhat , Sajal Dhara , Junqiao Wu , Mandar M. Deshmukh
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