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We show that, contrary to common belief, the depolarizing electric field generated by bound charges at thin-film surfaces can have a substantial impact on the domain structure of an improper ferroelectric with topological defects. In…

Materials Science · Physics 2025-10-16 Aaron Merlin Müller , Amadé Bortis , Arkadiy Simonov , Manfred Fiebig , Thomas Lottermoser

The depolarization fields set up to due to uncompensated surface charges in a ferroelectric thin film can suppress the ferroelectric phase below a critical size. Recent experiments show that 180 degree domain structures can help to…

Materials Science · Physics 2007-05-23 Rajeev Ahluwalia , David J. Srolovitz

Using the self-consistent Landau-Ginzburg-Devonshire approach we simulate and analyze the spontaneous formation of the domain structure in thin ferroelectric films covered with the surface screening charge of the specific nature…

A Ginzburg-Landau model is used to demonstrate how depletion layers give rise to thickness-dependent ferroelectric properties in thin films. It is shown that free charge layers at the film-electrode interface can result in an internal…

Materials Science · Physics 2013-04-19 Nathaniel Ng , Rajeev Ahluwalia , David J. Srolovitz

Using Landau-Ginzburg-Devonshire approach we calculated the equilibrium distributions of electric field, polarization and space charge in the ferroelectric-semiconductor heterostructures containing proper or incipient ferroelectric thin…

Macroscopic properties of ferroelectric samples, including those in form of thin films, are, to large extent, influenced by their domain structure. In this paper the free energy is calculated for a plate-like sample composed of…

Materials Science · Physics 2007-05-23 A. Kopal , P. Mokry , J. Fousek , T. Bahnik

We consider the influence of the built-in surface field on the 180-degree domain wall profile in primary ferroics within Landau-Ginsburg-Devonshire phenomenological approach. We predict the effect of domain wall bending near the surface…

Materials Science · Physics 2008-08-11 Eugene A. Eliseev

As a consequence of elasticity, mechanical deformations of crystals occur on a length scale comparable to their thickness. This is exemplified by applying a homogeneous electric field to a multi-domain ferroelectric crystal: as one domain…

Materials Science · Physics 2009-11-11 Tobias Jungk , Akos Hoffmann , Elisabeth Soergel

The conductance of domain wall structures consisting of either stripes or cylindrical domains in multi-axial ferroelectric-semiconductors is analyzed. The effects of the domain size, wall tilt and curvature, on charge accumulation, are…

Using the model system of ferroelectric domain walls, we explore the effects of long-range dipolar interactions and periodic ordering on the behavior of pinned elastic interfaces. In piezoresponse force microscopy studies of the…

Disordered Systems and Neural Networks · Physics 2014-02-18 B. Ziegler , K. Martens , T. Giamarchi , P. Paruch

The role of the surface during polarization switching in constrained ferroelectrics is investigated using the time-dependent Ginzburg-Landau theory. The model incorporates the elastic and electrostrictive effects in the form of a long-range…

Materials Science · Physics 2016-08-31 Rajeev Ahluwalia , Wenwu Cao

Using Landau-Ginzburg-Devonshire theory, we considered the impact of the flexoelectro-chemical coupling on the size effects inpolar properties and phase transitions of thin ferroelectric films with a layer of elastic defects. We…

We study theoretically the influence of the underlying domain microstructure on the electromechanical properties of ferroelectrics. Our calculations are based on a continuum approach that incorporates the long-range elastic and…

Materials Science · Physics 2007-05-23 Rajeev Ahluwalia , Turab Lookman , Avadh Saxena , Wenwu Cao

The interaction of electric field with charged domain walls in ferroelectrics is theoretically addressed. A general expression for the force acting per unit area of a charged domain wall carrying free charge is derived. It is shown that, in…

Materials Science · Physics 2012-01-31 Maxim Y. Gureev , Pavel Mokry , Alexander K. Tagantsev , Nava Setter

General features of finite size effects in the ferroelectric-semiconductor film under open-circuited electric boundary conditions are analyzed using Landau-Ginzburg-Devonshire theory and continuum media electrostatics. The temperature…

Materials Science · Physics 2015-06-19 Eugene A. Eliseev , Sergei V. Kalinin , Anna N. Morozovska

This paper combines experimental and modelling studies to provide a detailed examination of the influence of porosity volume fraction and morphology on the polarisation-electric field response of ferroelectric materials. The broadening of…

The theory of size effects of the properties of nanocrystalline ferroelectric ceramic or nanoparticle powder allowing for surface tension and depolarization field is proposed. Surface tension was included into free energy functional and…

Materials Science · Physics 2015-06-24 M. D. Glinchuk , A. N. Morozovskaya

We report piezo-response force microscopy studies of the static and dynamic properties of domain walls (DWs) in 11 to 36 nm thick films of crystalline ferroelectric poly(vinylidene-fluoride-trifluorethylene). The DW roughness exponent…

Materials Science · Physics 2013-09-11 Z. Xiao , Shashi Poddar , Stephen Ducharme , X. Hong

Domain walls in ferroelectrics exhibit a plethora of phases and functionalities not found in the bulk. The interplay of electrostatic, chemical, topological, and distortive inhomogeneities at the walls can be so complex, however, that this…

Mesoscale and Nanoscale Physics · Physics 2017-02-23 Gabriele De Luca , Marta D. Rossell , Jakob Schaab , Nathalie Viart , Manfred Fiebig , Morgan Trassin

In the framework of a continuum theory, it is shown that the direct flexoelectric response of a finite sample essentially depends on the surface polarization energy, even in the thermodynamic limit where the body size tends to infinity. It…

Materials Science · Physics 2019-01-16 A. S. Yurkov , A. K. Tagantsev
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