Related papers: Effective capacitance in a single-electron transis…

We report on a new type of single-electron transistor (SET) comprising two highly resistive Cr thin-film strips (~ 1um long) connecting a 1 um-long Al island to two Al outer electrodes. These resistors replace small-area oxide tunnel…

We analyze electron transport through relatively short coherent conductors in the presence of Coulomb interaction. We evaluate the current-voltage characteristics of such conductors taking into account the effect of an external environment.…

We calculate the effective action of a superconductor, without assuming that either the electron-electron potential or the Fermi surface obey rotational invariance. This approach leads to the same gap equation and equilibrium free energy as…

A real-space renormalization method for the frequency dependent conductivity of the periodic approximants of the Fibonacci chain is developed. This scheme is based on the known 2x2 transfer matrices and additional 5x5 matrices which allow…

Many important phenomena in quantum devices are dynamic, meaning that they cannot be studied using time-averaged measurements alone. Experiments that measure such transient effects are collectively known as fast readout. One of the most…

We study a superconducting single-electron transistor (SSET) which is coupled to a LC-oscillator via the phase difference across one of the Josephson junctions. This leads to a strongly anharmonic coupling between the SSET and the…

We obtain the effective action of tunnel-coupled quantum dots, by modeling the system as a Luttinger liquid with multiple barriers. For a double dot system, we find that the resonance conditions for perfect conductance form a hexagon in the…

Using Kubo's linear response theory, we derive expressions for the frequency-dependent electrical conductivity (Kubo-Greenwood formula), thermopower, and thermal conductivity in a strongly correlated electron system. These are evaluated…

We study electron transport through a small metallic island in the perturbative regime. Using a diagrammatic real-time technique, we calculate the occupation of the island as well as the conductance through the transistor at arbitrary…

The analytical continuation average spectrum method (ASM) and maximum entropy (MaxEnt) method are applied to the dynamic response of a noninteracting resonant level model within the framework of the Kubo formula for electric conductivity.…

Using far-infrared spectroscopy, we investigate the excitations of self-organized InAs quantum dots as a function of the electron number per dot, 1<n<6, which is monitored in situ by capacitance spectroscopy. Whereas the well-known two-mode…

We investigate a superconducting single-electron transistor capacitively coupled to a nanomechanical oscillator and focus on the double Josephson quasiparticle resonance. The existence of two coherent Cooper pair tunneling events is shown…

We study the real-time emission of single electrons from a quantum dot coupled to a one dimensional conductor, using exact diagonalization on a discrete tight-binding chain. We show that from the calculation of the time-evolution of the one…

We report a measurement on quantum capacitance of individual semiconducting and small band gap SWNTs. The observed quantum capacitance is remarkably smaller than that originating from density of states and it implies a strong electron…

Nontrivial capacitance behavior, including a negative capacitance (NC) effect, observed in a variety of semiconductor devices, is discussed emphasizing the physical mechanism and the theoretical interpretation of experimental data. The…

The conductivity of organic semiconductors is measured {\it in-situ} and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. The depletion layer thickness can be directly determined as…

For a capacitor made of a semiconducting carbon nanotube (CNT) suspended above a metallic gate, Coulomb correlations between individual electrons can lead to a capacitance that is much larger than the geometric capacitance. We argue that…

We present numerical results on electron tunneling in a single-electron box at low temperature. The effective action of this device is equivalent to the Hamiltonian of a classical XY spin chain with long ranged interactions. Using an…

An unresolved challenge facing electronics at a few-nm scale is that resistive channels start leaking due to quantum tunneling. This affects the performance of nanoscale transistors, with single-molecule devices displaying particularly low…

We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator…