Related papers: Non-adiabadic charge pumping in a hybrid SET trans…
Precise manipulation of individual charge carriers in nanoelectronic circuits underpins practical applications of their most basic quantum property --- the universality and invariance of the elementary charge. A charge pump generates a net…
We study adiabatic charge transfer in a superconducting Cooper pair pump, focusing on the influence of current measurement on coherence. We investigate the limit where the Josephson coupling energy $E_J$ between the various parts of the…
We present a theoretical study of the electronic transport through a many-level quantum dot driven by time-dependent signals applied at the contacts to the leads. If the barriers oscillate out of phase the system operates like a turnstile…
The latest field-effect transistors are entering the regime where quantum effects within the conduction channel can play a significant role because of the increasingly reduced dimensions. We investigate the effects of quantized states in…
We consider a system of two solid state charge qubits, coupled to a single read-out device, consisting of a single-electron transistor (SET). The conductance of each tunnel junction is influenced by its neighboring qubit, and thus the…
A single-electron trap built with two Superconductor (S) - Insulator (I) - Normal (N) metal tunnel junctions and coupled to a readout SINIS-type single-electron transistor A (SET A) was studied in a photon detection regime. As a source of…
The quantum conductance of the single-electron tunneling (SET) transistor is investigated in this paper by the functional integral approach. The formalism is valid for arbitrary tunnel resistance of the junctions forming the SET transistor…
Charge is transported through superconducting SSS single-electron transistors at finite bias voltages by a combination of coherent Cooper-pair tunneling and quasiparticle tunneling. At low transport voltages the effect of an ``odd''…
We demonstrate shadow evaporation-based fabrication of high-quality ultrasmall normal metal -- insulator -- superconductor tunnel junctions where the thickness of the superconducting electrode is not limited by the requirement of small…
We consider quantum charge pumping of electrons across a superconducting double barrier structure in the adiabatic limit. The superconducting barriers are assumed to be reflection-less so that an incident electron on the barrier can either…
We explain recent experimental observations on effective charge of edge states tunneling through a quantum point contact in the weak backscattering regime. We focus on the behavior of the excess noise and on the effective tunneling charge…
We solve the master equations of two charged qubits measured by a single-electron transistor (SET) consisted of two islands. We show that in the sequential tunneling regime the SET current can be used for reading out results of quantum…
Theoretical studies of the tunnelling current and emission spectrum of a single electron transistor (SET) under optical pumping are presented. The calculation is performed via Keldysh Green's function method within the Anderson model with…
In adiabatic Cooper pair pumps, operated by means of gate voltage modulation only, the quantization of the pumped charge during a cycle is limited due to the quantum coherence of the macroscopic superconducting wave function. In this work…
We report electron counting experiments in a silicon metal-oxide-semiconductor quantum dot architecture which has been previously demonstrated to generate a quantized current in excess of 80 pA with uncertainty below 30 parts per million.…
We study the quantized charge pumping of higher-order topological insulators (HOTIs) with edge-corner correspondences based on the combination of the rotation of in-plane magnetic field and the quantum spin Hall effect. A picture of a…
Semiconductor quantum dots in silicon are promising qubits because of long spin coherence times and their potential for scalability. However, such qubits with complete electrical control and fidelities above the threshold for quantum error…
We consider charge-qubit monitoring (continuous-in-time weak measurement) by a single-electron transistor (SET) operating in the sequential-tunneling regime. We show that commonly used master equations for this regime are not of the…
We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel…
The basis of synchronous manipulation of individual electrons in solid-state devices was laid by the rise of single-electronics about two decades ago. Ultra-small structures in a low temperature environment form an ideal domain of…