Related papers: GaMnAs-based hybrid multiferroic memory device
Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has…
Magnetic straintronics, the strain-mediated control of magnetic anisotropy, has emerged as a key direction for next-generation energy-efficient technologies. In multiferroic heterostructures, magnetoelectric coupling is typically achieved…
Electric field-induced magnetization switching in multiferroics holds profound promise for ultra-low-energy computing in beyond Moore's law era. Bistable nanomagnets in the multiferroics are usually deemed to be suitable for storing a…
Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display…
Altermagnets, a newly discovered class of magnets, integrate the advantages of both ferromagnets and antiferromagnets, such as enabling anomalous transport without stray fields and supporting ultrafast spin dynamics, offering exciting…
Despite the unprecedented downscaling of CMOS integrated circuits, memory-intensive machine learning and artificial intelligence applications are limited by data conversion between memory and processor. There is a challenging quest for…
Spintronics uses spins, the intrinsic angular momentum of electrons, as an alternative for the electron charge. Its long-term goal is in the development of beyond-Moore low dissipation technology devices. Recent progress demonstrated the…
We have studied the magnetic reversal of L-shaped nanostructures fabricated from (Ga,Mn)As. The strain relaxation due to the lithographic patterning results in each arm having a uniaxial magnetic anisotropy. Our analysis confirms that the…
The control of antiferromagnets by magnetic fields represents a fundamental challenge in condensed matter physics, owing to their fully compensated magnetic order and vanishing net magnetization. Conventional methods rely on either…
In planar nano-magnetic devices magnetization direction is kept close to a given plane by the large easy-plane magnetic anisotropy, for example by the shape anisotropy in a thin film. In this case magnetization shows effectively in-plane…
Information can be stored in magnetic materials by encoding with the direction of the magnetic moment of elements. A figure of merit for these systems is the energy needed to change the information rewrite the storage by changing the…
Single-molecule magnets weakly coupled to two ferromagnetic leads act as memory devices in electronic circuits---their response depends on history, not just on the instantaneous applied voltage. We show that magnetic anisotropy introduces a…
Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical…
We report on the controllable pinning of domain walls in stripes with perpendicular magnetic anisotropy by magnetostatic coupling to magnetic vortices in disks located above the stripe. Pinning mechanisms and depinning fields are reported.…
In the last decade, nanoscale resistive devices with memory have been the subject of intense study because of their possible use in brain-inspired computing. However, operational endurance is one of the limiting factors in the adoption of…
This paper presents a novel design concept for spintronic nanoelectronics that emphasizes a seamless integration of spin-based memory and logic circuits. The building blocks are magneto-logic gates based on a hybrid graphene/ferromagnet…
Antiferromagnetic spintronics is an emerging area of quantum technologies that leverage the coupling between spin and orbital degrees of freedom in exotic materials. Spin-orbit interactions allow spin or angular momentum to be injected via…
In recent years, antiferromagnetic spintronics has received much attention since ideal antiferromagnets do not produce stray fields and are much more stable to external magnetic fields compared to materials with net magnetization. Akin to…
The unique features of ultrafast spin dynamics and the absence of macroscopic magnetization in antiferromagnetic (AFM) materials provide a distinct route towards high-speed magnetic storage devices with low energy consumption and high…
A collective excitation of the spin structure in a magnetic insulator can transmit spin-angular momentum with negligible dissipation. This quantum of a spin wave, introduced more than nine decades ago, has always been manipulated through…