Related papers: Oblique Hanle Effect in Semiconductor Spin Transpo…
We consider "shuttling" of spin-polarized electrons between two magnetic electrodes (half-metals) by a movable dot with a single electronic level. If the magnetization of the electrodes is antiparallel we show that the transmittance of the…
We have studied the effects of Mn concentration on the ballistic spin-polarized transport through diluted magnetic semiconductor heterostructures with a single paramagnetic layer. Using a fitted function for zero-field conduction band…
The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…
It is shown that in spin injection experiments the interplay between external magnetic field and alternating current can be observed already on a single ferromagnet/normal metal interface. The interface resistance is predicted to exhibit…
We report the results of a study of magnetic field features of electron transport in heterojunctions with NS boundary inside iron-based superconductors, represented by a binary phase of $\alpha$ - FeSe and oxyarsenide pnictide LaO(F)FeAs.…
We investigate spin precession in the presence of randomly distributed field sources. Their fields h_i reorient by thermally activated transitions and decrease as r^{-mu} with the distance from the spin probe. Based on analytical…
The conductance modulations in spin field-effect transistors under finite bias voltages were studied. It was shown that when a finite bias voltage is applied between two terminals of a spin field-effect transistor, the spin precession…
Experimental evidence of electron spin precession during travel through the phosphorus-doped Si channel of an all-electrical device simultaneously indicates two distinct processes: (i) short timescales (~50ps) due to purely conduction-band…
We analyze spin-transport in semiconductors in the regime characterized by $T\stackrel{<}{\sim}T_F$ (intermediate to degenerate), where $T_F$ is the Fermi temperature. Such a regime is of great importance since it includes the lightly doped…
We investigate electrically-induced spin currents generated by the spin Hall effect in GaAs structures that distinguish edge effects from spin transport. Using Kerr rotation microscopy to image the spin polarization, we demonstrate that the…
Proximity effects are one of the pillars of exotic phenomena and technological applications of two dimensional materials. However, the interactions nature depends strongly on the materials involved, their crystalline symmetries, and…
An anomalous (inverse) spin accumulation in the nonmagnetic spacer may build up when the spin valve consists of magnetic films having different spin symmetries. This leads to wavy-like dependence of spin-transfer torque on the angle between…
Spin currents can modify the magnetic state of ferromagnetic ultrathin films through spin-orbit torque. They may be generated by means of spin-orbit interaction by either bulk or interfacial phenomena. Electrical transport measurements…
We show that the propagation of spin polarized carriers may be dramatically affected by {\em inhomogeneous} electric fields. Surprisingly, the spin diffusion length is found to strongly depend on the sign and magnitude of electric field…
A nonlocal electric response in the spin-Hall regime, resulting from spin diffusion mediating charge conduction, is predicted. The spin-mediated transport stands out due to its long-range character, and can give dominant contribution to…
The presence of edge channels in the quantum Hall regime leads to dissipationless charge transport over long distances. When graphene is interfaced with a magnetic material, the exchange interaction lifts the Landau levels spin degeneracy.…
Electron-nuclear spin interactions by pulsed optical pumping have been found to polarize the nuclear spin system, leading to the nuclei building up an intrinsic magnetic field known as the Overhauser field. Studies have indicated an…
We report a mechanical effect in spin-valve nanopillars due to spin transfer. A polarized current carrying electron spins transfers torque to local magnetization and leads to a magnetic switching of free layer. Like classical Einstein-de…
By studying the time and spatial evolution of a pulse of the spin polarization in $n$-type semiconductor quantum wells, we highlight the importance of the off-diagonal spin coherence in spin diffusion and transport. Spin oscillations and…
Spin-transport in superconductors is a subject of fundamental and technical importance with the potential for applications in superconducting-based cryogenic memory and logic. Research in this area is rapidly intensifying with recent…