Related papers: Oblique Hanle Effect in Semiconductor Spin Transpo…
Combined measurements of normal and inverted Hanle effects in CoFe/MgO/semiconductor (SC) contacts reveal the effect of spin relaxation rate on the interfacial spin depolarization (ISD) from local magnetic fields. Despite the similar…
A hybrid ferromagnet/semiconductor device is used to determine a lower bound on the spin lifetime for conduction electrons in silicon. We use spin precession to self-consistently measure the drift velocity vs. drift field of spin-polarized…
Space- and time-resolved measurements of spin drift and diffusion are performed on a GaAs-hosted two-dimensional electron gas. For spins where forward drift is compensated by backward diffusion, we find a precession frequency in absence of…
The silicon (Si) based spin-MOSFET (metal-oxide semiconductor field-effect transistor) is considered to be the building block of low-power-consumption electronics, utilizing spin-degrees of freedom in semiconductor devices. In this paper,…
When a spin-splitting field is introduced to a thin film superconductor, the spin currents polarized along the field couples to energy currents that can only decay via inelastic scattering. We study spin and energy injection into such a…
We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to…
In a spin field effect transistor, a magnetic field is inevitably present in the channel because of the ferromagnetic source and drain contacts. This field causes random unwanted spin precession when carriers interact with non-magnetic…
Helical states can be measured through the observation of the reentrant behaviour, which is a dip in the conductance probed in semiconducting nanowires (NWs) with strong spin-orbit coupling (SOC) under the presence of an external…
We compare different methods to measure the anisotropy of the spin-lifetime in graphene. In addition to out-of-plane rotation of the ferromagnetic electrodes and oblique spin precession, we present a Hanle experiment where the electron…
This article reviews steady-state spin densities and spin currents in materials with strong spin-orbit interactions. These phenomena are intimately related to spin precession due to spin-orbit coupling which has no equivalent in the steady…
Antiferromagnetic materials host pairs of spin-up and spin-down magnons which can be described in terms of a magnonic pseudospin. The close analogy between this magnonic pseudospin systems and that of electronic charge carriers led to the…
The underlying physics of the inverted Hanle effect appearing in Si was experimentally investigated using a Si spin valve, where spin transport was realized up to room temperature. No inverted-Hanle-related signal was observed in a…
We use lateral spin valves with varying interface resistance to measure non-local Hanle effect in order to extract the spin-diffusion length of the non-magnetic channel. A general expression that describes spin injection and transport,…
Motivated by the recently discovered magnonic Hanle effect in an insulating antiferromagnet [Wimmer et al., Phys. Rev. Lett. 125, 247204 (2020)], we develop a spin transport theory based on low-energy waves of antiferromagnetic N\'eel…
Over the last two decades organic spintronics has developed into a striving field with exciting reports of long spin diffusion lengths and spin relaxation times in organic semiconductors (OSCs). Easily processed and inexpensive, OSCs are…
Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin field effect transistor (sFET). To date, there have been only a few…
DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co90Fe10/Cu/Ni80Fe20 pillars. A perpendicular external field enhanced the coercive field separation between the reference layer…
Spin transport properties of the one-dimensional Heisenberg antiferromagnetic spin systems for both $S=1/2$ and S=1 are studied by applying twisted boundary magnetic field. The spin current displays significantly different behavior of the…
The drift-diffusion formalism for spin-polarized carrier transport in semiconductors is generalized to include spin-orbit coupling. The theory is applied to treat the extrinsic spin Hall effect using realistic boundary conditions. It is…
We investigate quantum coherence of electron spin transported through a semiconductor spintronic device, where spins are envisaged to be controlled by electrical means via spin-orbit interactions. To quantify the degree of spin coherence,…