Related papers: Oblique Hanle Effect in Semiconductor Spin Transpo…
The Hanle magnetoresistance is a telltale signature of spin precession in nonmagnetic conductors, in which strong spin-orbit coupling generates edge spin accumulation via the spin Hall effect. Here, we report the existence of a large Hanle…
We study the depolarization of optically oriented electrons in quantum wells subjected to an in-plane magnetic field and show that the Hanle curve drastically depends on the carrier mobility. In low-mobility structures, the Hanle curve is…
The magnitude of spin accumulation created in semiconductors by electrical injection of spin-polarized electrons from a ferromagnetic tunnel contact is investigated, focusing on how the spin signal detected in a Hanle measurement varies…
The intrinsic spin Hall effect in semiconductors has developed to a remarkably lively and rapidly growing branch of research in the field of semiconductor spintronics. In this article we give a pedagogical overview on both theoretical and…
It has been shown recently that in spin precession experiments, the interaction of spins with localized states can change the response to a magnetic field, leading to a modified, effective spin relaxation time and precession frequency.…
We consider the spin-orbit-induced spin Hall effect and spin swapping in diffusive superconductors. By employing the non-equilibrium Keldysh Green's function technique in the quasiclassical approximation, we derive coupled transport…
Graphene is a promising substrate for future spintronics devices owing to its remarkable electronic mobility and low spin-orbit coupling. Hanle precession in spin valve devices is commonly used to evaluate the spin diffusion and spin…
We report the results of magnetoresistance measurements in vertical organic spin valves with the magnetic field oriented perpendicular to the layer stack. The magnetoresistance measurements were performed after carefully preparing either…
We present a comprehensive quasiclassical approach for studying transport properties of superconducting diffusive hybrid structures in the presence of extrinsic spin-orbit coupling. We derive a generalized Usadel equation and boundary…
The spin precession in a cylindrical semiconductor nanowire due to Rashba spin-orbit coupling has been investigated theoretically using an InAs nanowire containing a surface two-dimensional electron gas as a model. The eigenstates,…
We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si…
It is shown that spin Hall effect creates uniform spin polarization of electrons in semiconductor with a linear in the momentum spin splitting of conduction band. In turn, the profile of the non-uniform spin polarization accumulated at the…
The electron spin lifetime and diffusion length are transport parameters that define the scale of coherence in spintronic devices and circuits. Since these parameters are many orders of magnitude larger in semiconductors than in metals,…
Recent achievements in semiconductor spintronics are discussed. Special attention is paid to spin-orbit interaction, coupling of electron spins to external electric fields, and spin transport in media with spin-orbit coupling, including the…
We report on experiments demonstrating coherent control of magnon spin transport and pseudospin dynamics in a thin film of the antiferromagnetic insulator hematite utilizing two Pt strips for all-electrical magnon injection and detection.…
The precession of magnon pseudospin about the equilibrium pseudofield, the latter capturing the nature of magnonic eigen-excitations in an antiferromagnet, gives rise to the magnon Hanle effect. Its realization via electrically injected and…
Resistance between two ferromagnetic electrodes coupled to a normal channel depends on their relative magnetizations. The spin-dependent component, R, of the resistance changes with magnetic field, B, normal to the directions of…
We discuss methods for imaging the nonequilibrium spin polarization of electrons in Fe/GaAs spin transport devices. Both optically- and electrically-injected spin distributions are studied by scanning magneto-optical Kerr rotation…
We show how the quantum Hall effect in an inverted-gap semiconductor (with electron- and hole-like states at the conduction- and valence-band edges interchanged) can be used to inject, precess, and detect the electron spin along a…
Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their…