English
Related papers

Related papers: Hydrogen Dissociation and Diffusion on Ni and Ti -…

200 papers

Realistic oxide materials are often semiconductors, in particular at elevated temperatures, and their surfaces contain undercoordiated atoms at structural defects such as steps and corners. Using hybrid density-functional theory and ab…

The importance of co-adsorption for applications of porous materials in gas separation has motivated fundamental studies, which have initially focused on the comparison of the binding energies of different gas molecules in the pores (i.e.…

Materials Science · Physics 2015-04-08 Kui Tan , Sebastian Zuluaga , Qihan Gong , Yuzhi Gao , Nour Nijem , Jing Li , Timo Thonhauser , Yves J Chabal

The kinetics of hydrogen diffusion in C15 cubic and C14 hexagonal TiCr$_2$H$_x$ (0 < $x$ <= 4) Laves-phase hydrogen storage alloys is investigated with density functional theory (DFT) and machine learning interatomic potentials (MLIPs).…

Materials Science · Physics 2026-02-26 Pranav Kumar , Fritz Körmann , Kaveh Edalati , Blazej Grabowski , Yuji Ikeda

The adsorption equilibrium constants of monovalent and divalent cations to material surfaces in aqueous media are central to many technological, natural, and geochemical processes. Cation adsorption/desorption is often proposed to occur in…

Sliding of two-dimensional materials is critical for their application as solid lubricants for space, and also relevant for strain engineering and device fabrication. Dopants such as Ni surprisingly improve lubrication in MoS$_2$, despite…

Materials Science · Physics 2022-10-03 Enrique Guerrero , David A. Strubbe

Hydrogen adsorption on graphene-supported metal clusters has brought much controversy due to the complex nature of the bonding between hydrogen and metal clusters. The bond types of hydrogen and graphene-supported Ti clusters are…

Adsorption of ammonia at NH3/NH2/H covered GaN(0001) surface was analyzed using results of ab initio calculations. The whole configuration space of partially NH3/NH2/H covered GaN(0001) surface was divided into zones differently pinned…

Materials Science · Physics 2016-11-09 Pawel Kempisty , Stanislaw Krukowski

Using density-functional calculations, we show that electron or hole doped graphene can strongly change the mobility of adsorbed atoms H and O. Interestingly, charge doping affects the diffusion of H and O in the opposite way, namely,…

Computational Physics · Physics 2016-08-04 Manh-Thuong Nguyen , Pham Nam Phong

The interaction of hydrogen with many transition metal surfaces is characterized by a coexistence of activated with non-activated paths to adsorption with a broad distribution of barrier heights. By performing six-dimensional quantum…

Condensed Matter · Physics 2007-05-23 Axel Gross , Matthias Scheffler

We examine the adsorption of a single Ni atom on a monolayer of MgO on a Ag substrate using DFT and DFT+U computational approaches. We find that the electronic and magnetic properties vary considerably across the three binding sites of the…

Materials Science · Physics 2015-06-18 Oliver R. Albertini , Amy Y. Liu , Barbara A. Jones

The enhancement of surface diffusion (DS) over the bulk (DV) in metallic glasses (MGs) is well documented and likely to strongly influence the properties of glasses grown by vapor deposition. Here, we use classical molecular dynamics…

Materials Science · Physics 2021-08-20 Ajay Annamareddy , Yuhui Li , Lian Yu , Paul M. Voyles , Dane Morgan

The effect of monolayers of oxygen (O) and hydrogen (H) on the possibility of material transfer at aluminium/titanium nitride (Al/TiN) and copper/diamond (Cu/C$_{\text{dia}}$) interfaces, respectively, were investigated within the framework…

Materials Science · Physics 2018-03-14 Gregor Feldbauer , Michael Wolloch , Pedro O. Bedolla , Josef Redinger , András Vernes , Peter Mohn

Diffusion of atomic and molecular hydrogen in the interstitial space between graphite sheets has been studied by molecular dynamics simulations. Interatomic interactions were modeled by a tight-binding potential fitted to density-functional…

Materials Science · Physics 2011-08-12 Carlos P. Herrero , Rafael Ramirez

Ni-doped MoS$_2$ is a layered material with useful tribological, optoelectronic, and catalytic properties. Experiment and theory on doped MoS$_2$ has focused mostly on monolayers or finite particles: theoretical studies of bulk Ni-doped…

Materials Science · Physics 2021-07-01 Enrique Guerrero , Rijan Karkee , David A. Strubbe

At low temperatures (10 K), hydrogen atoms can diffuse quickly on grain ice mantles and frequently encounter hydrogen molecules, which cover a notable fraction of grain surface. The desorption energy of H atoms on H2 substrates is much less…

Solar and Stellar Astrophysics · Physics 2021-03-31 Qiang Chang , Xuli Zheng , Xia Zhang , Donghui Quan , Yang Lu , Qingkuan Meng , Xiaohu Li , Long-Fei Chen

High quality reference data from diffusion Monte Carlo calculations are presented for bulk sI methane hydrate, a complex crystal exhibiting both hydrogen-bond and dispersion dominated interactions. The performance of some commonly used…

Materials Science · Physics 2014-05-13 Stephen J. Cox , Michael D. Towler , Dario Alfè , Angelos Michaelides

We investigate the adsorption of a Ni monolayer on the $\beta$-SiC(001) surface by means of highly precise first-principles all-electron FLAPW calculations. Total energy calculations for the Si- and C-terminated surfaces reveal high Ni-SiC…

Materials Science · Physics 2009-11-07 G. Profeta , A. Continenza , A. J. Freeman

Although real surfaces exhibit intricate topologies at the nanoscale, rough surface consideration is often overlooked in nanoscale heat transfer studies. Superimposed sinusoidal functions effectively model the complexity of these surfaces.…

Mg is currently the only p-type dopant in technological use in GaN. Its incorporation into the GaN lattice is difficult. It requires a thermal treatment that only partially activates the Mg. To achieve moderate p-type doping requires high…

Materials Science · Physics 2025-09-09 Or Haim Chaulker , Yury Turkulets , Ilan Shalish

Annealing Mg-implanted homoepitaxial GaN at temperatures at or above 1400 {\deg}C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects in the form of inversion domains contain…

‹ Prev 1 3 4 5 6 7 10 Next ›