Related papers: Quantum Transport Length Scales in Silicon-based S…
Low dimensional materials provide the possibility of improved thermoelectric performance due to the additional length scale degree of freedom for engineering their electronic and thermal properties. As a result of suppressed phonon…
Experimental observation of highly reduced thermal conductivity in surface-roughness dominated silicon nanowires have generated renewed interest in low-dimensional thermoelectric devices. Using a previous work where the scattering of…
The localization lengths of ultrathin disordered Au and Ag nanowires are estimated by calculating the wire conductances as functions of wire lengths. We study Ag and Au monoatomic linear chains, and thicker Ag wires with very small cross…
We consider the interplay of the elastic pinning and the Anderson localization in the transport properties of a charge-density wave in one dimension, within the framework of the Luttinger model in the limit of strong repulsion. We address a…
One-dimensional quantum wires are considered as prospective elements for spin transport and manipulation in spintronics. We study spin dynamics in semiconductor GaAs-like nanowires with disorder and spin-orbit interaction by using a…
The ballistic performance of electron transport in nanowire transistors is examined using a 10 orbital sp3d5s* atomistic tight-binding model for the description of the electronic structure, and the top-of-the-barrier semiclassical ballistic…
We analyze the effect of low dimensionality on the electrical conductivity ({\sigma}) and Seebeck coefficient (S) in ultra-narrow Si nanowires (NWs) by employing atomistic considerations for the electronic structures and linearized…
We present analytical model and molecular dynamics simulations of phonon heat transport in nanowires and nanoribbons with anharmonic lattices and dynamically rough surfaces and edges. In agreement with recent experiments on heat transport…
Our primary goal is to provide a rigorous treatment of scattering nonlocality in semiconductor nanostructures. On the one hand, starting from the conventional density-matrix formulation and employing as ideal instrument for the study of the…
A model is developed for a detailed investigation of the current flowing through a cylindrical nanosize MOSFET with a close gate electrode. The quantum mechanical features of the lateral charge transport are described by Wigner distribution…
We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional…
The ultralow thermal conductivity $\kappa$ observed experimentally in intentionally roughened silicon nanowires (SiNWs) is reproduced in phonon Monte Carlo simulations with exponentially correlated real-space rough surfaces similar to…
We have estimated parallel and perpendicular components of electrical conductivity and shear viscosity of quark matter at finite magnetic field and temperature by using their one-loop Kubo expressions in the framework of Nambu--Jona-Lasinio…
Utilizing atomistic lattice dynamics and scattering theory, we study thermal transport in nanodevices made of 10 nm thick silicon nanowires, from 10 to 100 nm long, sandwiched between two bulk reservoirs. We find that thermal transport in…
In this work, the consequence of the high band-edge density of states on the carrier statistics and quantum capacitance in transition metal dichalcogenide two-dimensional semiconductor devices is explored. The study questions the validity…
Transport plays a key role in characterizing topological insulators and semimetals. Understanding the effect of disorder is crucial to assess the robustness of experimental signatures for topology. In this work, we find the absence of…
State of the art quantum transport models for semiconductor nanodevices attribute negative (positive) unit charges to states of the conduction (valence) band. Hybrid states that enable band-to-band tunneling are subject to interpolation…
Capacitance-voltage characteristics of individual germanium nanowire field effect transistors were directly measured and used to assess carrier mobility in nanowires for the first time; thereby removing uncertainties in calculated mobility…
Quantum transport in disordered magnetic fields is investigated numerically in two-dimensional systems. In particular, the case where the mean and the fluctuation of disordered magnetic fields are of the same order is considered. It is…
There has been a recent surge of interest in understanding charge transport at atomic scales. The motivations are myriad, including understanding the conductance properties of peptides measured experimentally. In this study, we propose a…