Related papers: Measuring current by counting electrons in a nanow…
Low dimensional nano-systems are promising candidates for manipulating, controlling and capturing photons with large sensitivities and low-noise. If quantum engineered to tailor the energy of the localized electrons across the desired…
We present a set of concrete and realistic ideas for the implementation of a small-scale quantum computer using electron spins in lateral GaAs/AlGaAs quantum dots. Initialization is based on leads in the quantum Hall regime with tunable…
We demonstrate a novel method for measuring the discrete energy spectrum of a quantum dot connected very weakly to a single lead. A train of voltage pulses applied to a metal gate induces tunneling of electrons between the quantum dot and a…
When a quantum dot is subjected to a thermal gradient, the temperature of electrons entering the dot can be determined from the dot's thermocurrent if the conductance spectrum and background temperature are known. We demonstrate this…
Dispersive sensing is a powerful technique that enables scalable and high-fidelity readout of solid-state quantum bits. In particular, gate-based dispersive sensing has been proposed as the readout mechanism for future topological qubits,…
Scanning-probe magnetometry is a valuable experimental tool to investigate magnetic phenomena at the micro- and nanoscale. We theoretically analyze the possibility of measuring magnetic fields via the electrical current flowing through…
We demonstrate real-time detection of self-interfering electrons in a double quantum dot embedded in an Aharonov-Bohm interferometer, with visibility approaching unity. We use a quantum point contact as a charge detector to perform…
A double quantum dot charge detector, with one dot Coulomb coupled to the electron to be detected and the other modulated by a time-dependent plunger voltage, is analyzed in a minimal model. The signal and noise of the detector are…
We present finite bias measurements on a quantum dot coupled capacitively to a quantum point contact used as a charge detector. The transconductance signal measured in the quantum point contact at finite dot bias shows structure which…
We investigated the quantum gates of coupled quantum dots, theoretically, when charging effects can be observed. We have shown that the charged states in the qubits can be observed by the channel current of the MOSFET structure.
We have measured the full counting statistics (FCS) of current fluctuations in a semiconductor quantum dot (QD) by real-time detection of single electron tunneling with a quantum point contact (QPC). This method gives direct access to the…
We report on the electric measurements of an individual Au nanoparticle with an ultra-high contact resistance of about $10^{19} \Omega$. The high-impedance measurements have been carried out by counting the electrons that are transferred…
A theory of electron counting statistics in quantum transport is presented. It involves an idealized scheme of current measurement using a spin 1/2 coupled to the current so that it precesses at the rate proportional to the current. Within…
We propose to measure the superradiance effect by observing the current through a semiconductor double-dot ststem. An electron and a hole are injected separately into one of the quantum dots to form an exciton and then recombine…
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon…
We consider two driven cavities (capacitors) connected in series via an edge state. The cavities are driven such that they emit an electron and a hole in each cycle. Depending on the phase lag the second cavity can effectively absorb the…
We use a double quantum dot as a frequency-tunable on-chip microwave detector to investigate the radiation from electron shot-noise in a near-by quantum point contact. The device is realized by monitoring the inelastic tunneling of…
We report charge sensing measurements on a silicon quantum dot (QD) with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that…
Measurement of charge configurations in few-electron quantum dots is a vital technique for spin-based quantum information processing. While fast and high-fidelity measurement is possible by using proximal quantum dot charge sensors, their…
It is known that a quantum computer operating on electron-spin qubits with single-electron Hamiltonians and assisted by single-spin measurements can be simulated efficiently on a classical computer. We show that the exponential speed-up of…