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An improved method of energy calibration of position-sensitive silicon detector is presented. Instead of the parabolic function used in traditional method, a new function describing the relation of position and energy is introduced and…

The quadrant silicon detector, a kind of passivated implanted planar silicon detector with quadrant structure on the junction side, gained its wide application in charged particle detection. In this paper, the manufacturing procedure,…

This paper presents a first study of the performance of a novel 2D position-sensitive microstrip detector, where the resistive charge division method was implemented by replacing the metallic electrodes with resistive electrodes made of…

A silicon microstrip detector (SSD) has been developed to have state of the art spatial resolution and a large sensitive area under stringent power constraints. The design incorporates three floating strips with their bias resistors…

We are developing position sensitive silicon detectors (PSDs) which have an electrode at each of four corners so that incident position of a charged particle can be obtained with signal from the electrodes. It is expected that the position…

A two-dimensional position-sensitive microchannel plate detector, with a {\O}100 mm sensitive area and equipped with four integrated amplifiers, is realized with a new anode scheme. The anode is constructed by two independent…

Pixelated silicon detectors are state-of-the-art technology to achieve precise tracking and vertexing at collider experiments, designed to accurately measure the hit position of incoming particles in high rate and radiation environments.…

We are developing position sensitive silicon detectors (PSD) which have an electrode at each of four corners so that the incident position of a charged particle can be obtained using signals from the electrodes. It is expected that the…

Silicon carbide (SiC) Schottky diodes 21 mum thick with small surfaces and high N-dopant concentration have been used to detect alpha particles and low energy light ions. In particular 12C and 16O beams at incident energies between 5 and 18…

A double-layer silicon detector consisting of two 500micron-thick silicon PIN photodiodes with independent readouts was mounted in a vacuum chamber and tested with X-ray sources. The detector is sensitive from 1-30 keV with an effective…

The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier…

A prototype of a position sensitive photo-detector with 5.6 x 5.6 cm2 detection area readout with 64 Hamamatsu MPPCs (S10931-100P) with 3 x 3 mm2 active area each has been built and tested. The photo-sensors are arranged in a 8 x 8 array…

There is growing interest in high-energy astrophysics community for the development of sensitive instruments in the hard X-ray energy extending to few hundred keV. This requires position sensitive detector modules with high efficiency in…

To cope with environments with high levels of radiation, non-silicon semiconductors such as silicon carbide detectors are being proposed for instrumentation. 4H-SiC diodes for radiation detection have been fabricated in the IMB-CNM Clean…

Two design innovations, low-gain avalanche (Low-Gain Avalance Diode, LGAD) and resistive read-out (Resistive Silicon Detector, RSD), have brought strong performance improvements to silicon sensors. Large signals, due to the added gain…

The optimization of resistive anode for two dimensional imaging detectors which consists of a series of high resistive square pads surrounding by low resistive strips has been studied by both numerical simulations and experimental tests. It…

For 4H silicon carbide (4H-SiC), the values for the electron-hole pair creation energy $\epsilon_{\text{i}}$ published in the literature vary significantly. This work presents an experimental determination of $\epsilon_{\text{i}}$ using…

We report on the design, production, and testing of advanced double-sided silicon strip detectors under development at the Max-Planck-Institute as part of the Medium Energy Gamma-ray Astronomy (MEGA) project. The detectors are designed to…

The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at…

In the context of the Silicon tracking for a Linear Collider (SiLC) R&D collaboration, a highly compact mixed-signal chip has been designed in 130nm CMOS technology intended to read Silicon strip detectors for the experiments at the future…