Related papers: Electron spin relaxation in GaAs quantum dot syste…
We investigate the dynamically polarized nuclear-spin system in Fe/\emph{n}-GaAs heterostructures using the response of the electron-spin system to nuclear magnetic resonance (NMR) in lateral spin-valve devices. The hyperfine interaction is…
Quantum dots are recognized as a suitable platform for studying thermodynamic phenomena involving single electronic charges and spins in nano-scale devices. However, such a thermodynamic system is usually driven by electron reservoirs at…
We review our investigation of the spin dynamics for two electrons confined to a double quantum dot under the influence of the hyperfine interaction between the electron spins and the surrounding nuclei. Further we propose a scheme to…
Understanding the decoherence of electron spins in semiconductors due to their interaction with nuclear spins is of fundamental interest as they realize the central spin model and of practical importance for using electron spins as qubits.…
We discuss the implications of a small indium content (3%) in a GaAs epilayer on the electron- and nuclear-spin relaxation due to enhanced quadrupolar effects induced by the strain. Using the weakly perturbative spin-noise spectroscopy, we…
The dynamic polarization of nuclear spins by photoexcited electrons is studied in a high quality GaAs/AlGaAs quantum well. We find a surprisingly high efficiency of the spin transfer from the electrons to the nuclei as reflected by a…
We have studied the effect of nonequilibrium longitudinal optical phonons on hot-electron spin relaxation in $n$-type GaAs quantum wells. The longitudinal optical phonons, due to the finite relaxation rate, are driven to nonequilibrium…
We consider a system of two strongly coupled electron spins in zero magnetic field, each of which is interacting with an individual bath of nuclear spins via the hyperfine interaction. Applying the long spin approximation (LSA) introduced…
We report on the numerical study of the relaxation rates of nuclear spins coupled through the hyperfine interaction to a two dimensional electron gas (2DEG) at magnetic fields corresponding to both fractional and integral Landau level (LL)…
Electron-spin relaxation at different surfaces of p-doped GaAs is investigated by means of spin, time and energy resolved 2-photon photoemission. These results are contrasted with bulk results obtained by time-resolved Faraday rotation…
We present a theory for the dissipation of electronic spins trapped in quantum dots due to their coupling to the host lattice acoustic phonon modes. Based on the theory of dissipative two level systems for the spin dynamics, we derive a…
In self assembled III-V semiconductor quantum dots, valence holes have longer spin coherence times than the conduction electrons, due to their weaker coupling to nuclear spin bath fluctuations. Prolonging hole spin stability relies on a…
We observe the noise spectrum of electron spins in bulk GaAs by Faraday rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron spin dynamics in semiconductors. We measure exemplarily the…
We present spin noise (SN) measurements on an ensemble of donor-bound electrons in ultrapure GaAs:Si covering temporal dynamics over six orders of magnitude from milliseconds to nanoseconds. The SN spectra detected at the donor-bound…
An electron spin qubit in a silicon donor atom is a promising candidate for quantum information processing because of its long coherence time. To be sensed with a single-electron transistor, the donor atom is usually located near an…
A theory of electron spin relaxation in semiconducting carbon nanotubes is developed based on the hyperfine interaction with disordered nuclei spins I=1/2 of $^{13}$C isotopes. It is shown that strong radial confinement of electrons…
Quantum measurement back action is fundamentally unavoidable when manipulating electron spins. Here we demonstrate that this back action can be efficiently exploited to tune the spin relaxation of localized electrons induced by the…
We demonstrate electrical control of the spin relaxation time T_1 between Zeeman split spin states of a single electron in a lateral quantum dot. We find that relaxation is mediated by the spin-orbit interaction, and by manipulating the…
We study spin-orbit mediated relaxation and dephasing of electron spins in quantum dots. We show that higher order contributions provide a relaxation mechanism that dominates for low magnetic fields and is of geometrical origin. In the…
We measure the donor-bound electron longitudinal spin-relaxation time ($T_1$) as a function of magnetic field ($B$) in three high-purity direct-bandgap semiconductors: GaAs, InP, and CdTe, observing a maximum $T_1$ of $1.4~\text{ms}$,…