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Using first-principle electronic structure calculations, we show a metal- semiconductor transition of a metallic graphene nanoribbon with zigzag edges induced by substitutional doping of Nitrogen or Boron atoms at the edges. A field effect…
Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of…
Graphene-based vertical field effect transistors have attracted considerable attention in the light of realizing high-speed switching devices; however, the functionality of such devices has been limited by either their small ON-OFF current…
Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon electronic era. For this reason, experimental research on…
In this work, an analytical model to calculate the channel potential and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type…
We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode…
A first-principle model is proposed to study the electrostatic properties of a double-gated silicon slab of nano scale in the framework of density functional theory. The applied gate voltage is approximated as a variation of the…
In this work we describe a proposal for a graphene-based nanostructure that modulates electric current even in the absence of a gap in the band structure. The device consists of a graphene p-n junction that acts as a Veselago lens that…
Atomically precise graphene nanoribbons (GNRs) have emerged as promising candidates for nanoelectronic applications due to their widely tunable energy band gaps resulting from lateral quantum confinement and edge effects. Here we report on…
Ambipolar currents in Germanium p-type nanowire Schottky barrier MOSFETs were calculated fully quantum-mechanically by using the multi-band k.p method and the non-equilibrium Green's function approach. We investigated the performance of…
Graphene is an attractive electrode material to contact nanostructures down to the molecular scale since it can be gated electrostatically. Gating can be used to control the doping and the energy level alignment in the nanojunction, thereby…
We study time-dependent electron transport and quantum noise in a ballistic graphene field effect transistor driven by an ac gate potential. The non-linear response to the ac signal is computed through Floquet theory for scattering states…
We analyze the properties of Fe Schottky contacts prepared in situ on n-type GaN(0001) by molecular beam epitaxy. In particular, we investigate the suitability of these epitaxial Fe layers for electrical spin injection.…
We have realized nanometer size constrictions in ballistic graphene nanoribbons grown on sidewalls of SiC mesa structures. The high quality of our devices allows the observation of a number of electronic quantum interference phenomena. The…
We propose a model for the electric current in graphene in which electric carriers are supplied by virtual particles allowed by the uncertainty relations. The process to make a virtual particle real is described by a weak value of a group…
A scalable tight-binding model is applied for large-scale quantum transport calculations in clean graphene subject to electrostatic superlattice potentials, including two types of graphene superlattices: moir\'e patterns due to the stacking…
Bilayer graphene is a promising material for radio-frequency transistors because its energy gap might result in a better current saturation than the monolayer graphene. Because the great deal of interest in this technology, especially for…
Recent experiments on ferroelectric gating have introduced a novel functionality, i.e. nonvolatility, in graphene field effect transistors. A comprehensive understanding in the non-linear, hysteretic ferroelectric gating and an effective…
A yet unexplored area in graphene electronics is the field of quantum ballistic transport through graphene nanostructures. Recent developments in the preparation of high mobility graphene are expected to lead to the experimental…
Graphene nanoribbons (GNRs) are thin strips of graphene with unique properties due to their structure and nanometric dimensions. They stand out as basic components for the construction of different types of nanoelectromechanical systems…