Related papers: Large voltage from spin pumping in magnetic tunnel…
We experimentally investigate the structural, magnetic and electrical transport properties of La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ based magnetic tunnel junctions with a SrSnO$_3$ barrier. Our results show that despite the large number of…
We calculate the tunneling conductance of a graphene normal metal-insulator-superconductor (NIS) junction with a barrier of thickness $d$ and with an arbitrary voltage $V_0$ applied across the barrier region. We demonstrate that the…
We derive fluctuation-dissipation relations for a tunnel junction driven by a high impedance microwave resonator, displaying strong quantum fluctuations. We find that the fluctuation-dissipation relations derived for classical forces hold,…
Theory of electrical spin injection from a ferromagnetic (FM) metal into a normal (N) conductor is presented. We show that tunnel contacts (T) can dramatically increase spin injection and solve the problem of the mismatch in the…
We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that…
We study the point-contact tunneling between normal metal and ferromagnetic superconductor. In the case of magnon-induced pairing the tunneling conductance is continuous and smooth function of the applied voltage. For small values of the…
We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ohm-micron-squared, barriers. The current densities required…
We experimentally demonstrate that large magnetic vortex oscillations can be parametrically excited in a magnetic tunnel junction by the injection of radio-frequency (rf) currents at twice the natural frequency of the gyrotropic vortex core…
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is…
We have used the method of generating functional in imaginary time to derive the current-voltage characteristics of a tunnel junction with arbitrary tunneling conductance, connected in series with an external impedance and a voltage source.…
We study tunnel junctions consisting of a two-dimensional ferroelectric (FE) material sandwiched between graphene electrodes. We formulate a theory for the interplay of the FE polarization and induced free charges in such devices, taking…
We study a diffusive superconductor - normal metal - superconductor (SNS) junction in an external magnetic field. In the limit of a long junction, we find that the form of the dependence of the Josephson current on the field and on the…
Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunnel junctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm < $t_{MgO}$ < 1.05 nm) is studied using the spin-torque diode effect. The application of…
We theoretically study the spin-dependent transport in a ferromagnet/superconductor/ferro-magnet double barrier tunnel junction. The spin-polarized tunneling currents give rise to spin imbalance in the superconductor. The resulting…
We develop a theoretical model of magnon-assisted transport in a mesoscopic tunnel junction between a ferromagnetic metal and a normal (non-magnetic) metal. The current response to a bias voltage is dominated by the contribution of elastic…
We have investigated the mechanism at the origin of the infra-red radiation emitted by a biased tunnel junction by detecting photons at frequencies $\nu<eV/h$. To address this regime, the bias voltage $V$ exceeds one volt and the potential…
A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation is considered. The junction magnetic energy is analyzed as a function of the angle between the layer magnetization vectors under various magnetic fields. The tunnel…
Magnetic tunnel junctions with the layer sequence Co$_2$Cr$_{0.6}$Fe$_{0.4}$Al/MgO/CoFe were fabricated by magnetron sputtering at room temperature (RT). The samples exhibit a large inverse tunneling magnetoresistance (TMR) effect of up to…
Resistance switching in multilayer structures are typically based on materials possessing ferroic orders. Here we predict an extremely large resistance switching based on the relative spin-orbit splitting in twisted transition metal…
We present a quantitative study of the current-voltage characteristics (CVC) of diffusive superconductor/ insulator/ ferromagnet/ superconductor (SIFS) tunnel Josephson junctions. In order to obtain the CVC we calculate the density of…