Related papers: Shot Noise in Ballistic Graphene
We show that shot noise in a resonant tunneling diode biased in the negative differential resistance regions of the I-V characteristic is enhanced with respect to ``full'' shot noise. We provide experimental results showing a Fano factor up…
Based on the Lorenz-Mie theory, we derive analytical expressions of radiative and nonradiative transition rates for different orientations of a point dipole emitter in the vicinity of an infinitely long circular cylinder of arbitrary…
Charge noise is critical in the performance of gate-controlled quantum dots (QDs). Here we show the 1/f noise for a microscopic graphene QD is substantially larger than that for a macroscopic graphene field-effect transistor (FET),…
The fractional charge of quasiparticles is a fundamental feature of quantum Hall effect (QHE) States. The charge has long been measured via shot-noise at moderate temperatures ($T$>30mK), with the Fano factor $F=e^*/e$ revealing the charge…
We theoretically study the electronic transport properties of Dirac fermions through one and double triangular barriers in graphene. Using the transfer matrix method, we determine the transmission, conductance and Fano factor. They are…
We have investigated the absorption spectrum of multilayer graphene in high magnetic fields. The low energy part of the spectrum of electrons in graphene is well described by the relativistic Dirac equation with a linear dispersion…
The progress in nanofabrication, measurement technology, and mesoscopic transport theory has been expanding the field of shot noise. Although a wave-packet approach to DC shot noise of independent electrons at finite temperature was offered…
We measure the temperature distribution in a biased single-layer graphene transistor using Raman scattering microscopy of the 2D-phonon band. Peak operating temperatures of 1050 K are reached in the middle of the graphene sheet at 210 KW…
The analytic expressions for the maximum and minimum reflectance of optical films coated with gapped graphene are derived in the application region of the Dirac model with account of multiple reflections. The respective film thicknesses are…
The shot noise of spin polarized electrons is shown to be generically dependent upon spin-flip processes. Such a situation represents perhaps the simplest instance where the two-particle character of current fluctuations out of equilibrium…
We extend the theory of shot noise in coherent metals to shot noise in strange metals without quasiparticle excitations. This requires a generalization of the Boltzmann equation with a noise source to distribution functions which depend…
We present a novel and comprehensive model of 1/f noise in nanoscale graphene devices that accounts for the unusual and so far unexplained experimental characteristics. We find that the noise power spectral density versus carrier…
Multi-layer epitaxial graphene (MEG) is investigated using far infrared (FIR) transmission experiments in the different limits of low magnetic fields and high temperatures. The cyclotron-resonance like absorption is observed at low…
We report a detailed investigation of low-frequency resistance fluctuations (1/f noise) in chemical vapor deposition (CVD) grown graphene. Systematic measurements reveal that the magnitude of 1/f noise in CVD-grown graphene is significantly…
In the quantum Hall effect (QHE) regime, heat is carried by electrons in the edge states of Landau levels. Here, we study cooling of hot electrons propagating along the edge of graphene at the filling factor $\nu=\pm2$, mediated by acoustic…
The close approach of the Fermi energy EF of a Dirac semimetal to the Dirac point ED uncovers new physics such as velocity renormalization,1,2,3 and the Dirac plasma 4,5 at |EF -ED| < kBT, where kBT is the thermal energy. In graphene,…
We demonstrate that current-current correlations (in particular the shot noise), can be used to study the intrinsic superconductivity in a slightly doped Weyl semi-metal. The systems studied is an N-WS tunneling junction where the left…
We predict shot noise enhancement in defect-free carbon nanotube field-effect transistors through a numerical investigation based on the self-consistent solution of the Poisson and Schrodinger equations within the non-equilibrium Green…
Scattering mechanisms in graphene are critical to understanding the limits of signal-to-noise-ratios of unsuspended graphene devices. Here we present the four-probe low frequency noise (1/f) characteristics in back-gated single layer…
Graphene-based devices show $1/f$ low-frequency noise in several electronic transport properties, such as mobility and charge carrier concentration. The recent outburst of experimental studies on graphene-based devices integrated into…