Related papers: Au-SN Flip-Chip Solder Bump for Microelectronic an…
Scalability and performance of current flash memories can be improved substantially by replacing the floating poly-Si gate by a layer of Si dots. This multi-dot layer can be fabricated CMOS-compatibly in very thin gate oxide by ion beam…
We explore an alternative way to fabricate (In,Ga)N/GaN short-period superlattices on GaN(0001) by plasma-assisted molecular beam epitaxy. We exploit the existence of an In adsorbate structure manifesting itself by a…
We present the results of the characterization of pixel modules composed of 75 um thick n-in-p sensors and ATLAS FE-I3 chips, interconnected with the SLID (Solid Liquid Inter-Diffusion) technology. This technique, developed at…
Using angle resolved photoemission it is shown that the low lying electronic states of the iron pnictide parent compound EuFe$_2$As$_2$ are strongly modified in the magnetically ordered, low temperature, orthorhombic state compared to the…
Interfacing graphene with solid-state devices and maintaining it free of contamination is a crucial step towards a functioning device, be it a semiconductor structure or any other device for technological applications. We take advantage of…
Synthesis of organic bi-layers on silicon was realized by a combination of surface functionalization under ultra-high vacuum (UHV) conditions and solution-based click chemistry. The silicon (001) surface was prepared with a high degree of…
The performance of pixel modules built from 75 micrometer thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer…
We have investigated spin-electricity conversion on surface states of bulk-insulating topological insulator (TI) materials using a spin pumping technique. The sample structure is Ni-Fe|Cu|TI trilayers, in which magnetic proximity effects on…
We enable density-based topology optimization (TO) to design integrated photonic devices featuring nonvertical sidewall profiles. Specifically, we demonstrate TO for fabrication processes with slanted sidewalls which are often used to…
We report on the insulator-to-metal transition in Se-hyperdoped Si layers driven by manipulating the Se concentration via non-equilibrium material processing, i.e. ion implantation followed by millisecond-flash lamp annealing. Electrical…
We present a resonant approach to enhance 1550nm emission efficiency of amorphous silicon sub-oxide doped with Er3+ (a-SiOx<Er>) layers with silicon nanoclusters (Si-NC). Two distinct techniques were combined to provide a structure that…
Electron tomography has become a commonly used tool to investigate the three-dimensional (3D) structure of nanomaterials, including colloidal nanoparticle assemblies. However, electron microscopy is typically carried out under high vacuum…
We report on the development of 3D silicon sensors at the University of Science and Technology of China (USTC). The sensor involves columnar electrodes (5 um in diameter) of both doping types, etched from the same wafer side. The p+…
Using density functional theory, we investigate the electronic structure of the alpha phase of an antimony monolayer in its isolated form and in contact to the (111) surface of gold. We demonstrate that the isolated single-layer actually…
Spatial confinement of electronic topological surface states (TSS) in topological insulators poses a formidable challenge because TSS are protected by time-reversal symmetry. In previous works formation of a gap in the electronic spectrum…
Applications such as augmented and virtual reality (AR/VR), optical atomic clocks, and quantum computing require photonic integration of (near-)visible laser sources to enable commercialization at scale. The heterogeneous integration of…
Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challenging, limiting both scalability and device performance.…
Superconducting resonators play a crucial role in the development of quantum technologies such as quantum computing or high performance detectors. Yet, one of their main limitations regarding to noise and sensitivity is the interaction with…
Advanced exfoliation techniques are crucial for exploring the intrinsic properties and applications of 2D materials. Though the recently discovered Au-enhanced exfoliation technique provides an effective strategy for preparation of…
We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN($1\bar{1}00$) surface. To this end, ScN is grown on free-standing GaN($1\bar{1}00$) substrates and self-assembled GaN nanowires that exhibit ($1\bar{1}00$) sidewalls.…