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Strong coupling among external voltage, electrochemical potentials, concentrations of electronic and ionic species, and strains is a ubiquitous feature of solid state mixed ionic-electronic conductors (MIECs), the materials of choice in…

Materials Science · Physics 2015-05-20 A. N. Morozovska , E. A. Eliseev , A. K. Tagantsev , S. L. Bravina , Long-Qing Chen , S. V. Kalinin

The height of dielectric metasurfaces is largely considered a constant in the fabrication process due to the top-down fabrication approach, resulting in a binary structure. Yet, for the recently introduced Mie voids metasurfaces,…

Optics · Physics 2026-03-31 Oren Goldberg , Noa Mazurski , Uriel Levy

Silicon vacancies ($V_\mathrm{Si}$) in 4H-SiC are promising candidates for quantum technologies due to their long spin coherence times and integrability into mature semiconductor platforms. However, conventional CMOS-compatible processing…

The ability to engineer atomically thin nanoscale lateral heterojunctions (HJs) is critical to lay the foundation for future two-dimensional (2D) device technology. However, the traditional approach to creating a heterojunction by direct…

2D nanoelectronics based on single-layer MoS2 offers great advantages for both conventional and ubiquitous applications. This paper discusses the large-scale CVD growth of single-layer MoS2 and fabrication of devices and circuits for the…

Chemical, mechanical, thermal and/or electronic properties of bulk or low-dimensional materials can be engineered by introducing structural defects to form novel functionalities. When using particles irradiation, these defects can be…

Materials Science · Physics 2022-02-07 L. Basta , A. Moscardini , S. Veronesi , F. Bianco

It may be possible to reinvent how microelectronics are made using a two step process: (1) Synthesizing modular, nanometer-scale components -- transistors, sensors, and other devices -- and suspending them in a liquid "ink" for storage or…

Computers and Society · Computer Science 2023-03-21 Michael Filler , Benjamin Reinhardt

Vacuum nanodevices are devices that the electron transport through them is based on electron field emission from a nano-eimtter to another opposite electrode through a vacuum channel. Geometrically asymmetric metal-vacuum-metal structures…

Mesoscale and Nanoscale Physics · Physics 2016-09-20 M. S. Khalifa , A. H. Badawi , T. A. Ali , N. H. Rafat , A. A. Abouelsaood

Iontronics combines ions as charge carriers with electronic-like operations, enabling unique information processing, chemical regulation, and enhanced bio-integrability. Standard simulation tools encounter difficulties in effectively…

Emerging Technologies · Computer Science 2024-12-12 Noa Edri Fraiman , Barak Sabbagh , Gilad Yossifon , Alexander Fish

In the construction of High-Luminosity Large Hadron Collider (HL-LHC) and Future Circular Collider (FCC) experiments, 3D pixel sensors have become indispensable components due to their superior radiation hardness, fast response, and low…

Instrumentation and Detectors · Physics 2025-10-14 Huimin Ji , Zhihua Li , Wenzheng Cheng , Zheng Li , Kai Huang , Jing Wen , Song Liu , Manwen Liu , Jun Luo

The ability to design passive structures that perform different operations on different electromagnetic fields is key to many technologies, from beam-steering to optical computing. While many techniques have been developed to optimise…

Applied Physics · Physics 2022-11-28 J. R. Capers , S. J. Boyes , A. P. Hibbins , S. A. R. Horsley

Micro-Raman scattering and electron field emission characteristics of silicon nanowires (SiNWs) synthesized by metal assisted chemical etching (MACE) are investigated. Scanning electron microscopy images reveal the growth of well aligned…

Mesoscale and Nanoscale Physics · Physics 2014-11-14 Vivek Kumar , Shailendra K. Saxena , Vishakha Kaushik , Kapil Saxena , Rajesh Kumar , A. K. Shukla

Layered transition metal dichalcogenides (TMDs) offer many attractive features for next-generation low-dimensional device geometries. Due to the practical and fabrication challenges related to in situ methods, the atomistic dynamics that…

Three-dimensional self-assembly of lithographically patterned ultrathin films opens a path to manufacture microelectronic architectures with functionalities and integration schemes not accessible by conventional two-dimensional…

The unique properties and atomic thickness of two-dimensional (2D) materials enable smaller and better nanoelectromechanical sensors with novel functionalities. During the last decade, many studies have successfully shown the feasibility of…

Two-dimensional (2D) Dirac materials have attracted intense research efforts due to their promise for applications ranging from field-effect transistors and low-power electronics to fault-tolerant quantum computation. One key challenge is…

Materials Science · Physics 2023-08-25 Jiaqi Deng , Gulnigar Ablat , Yumu Yang , Xiaoshuai Fu , Qilong Wu , Ping Li , Li Zhang , Ali Safaei , Lijie Zhang , Zhihui Qin

We consider quantum rings realized in materials where the dynamics of charge carriers mimics that of two-dimensional (2D) Dirac electrons. A general theoretical description of the ring-subband structure is developed that applies to a range…

Mesoscale and Nanoscale Physics · Physics 2018-05-17 L. Gioia , U. Zülicke , M. Governale , R. Winkler

A modified electron beam induced deposition method using a parallel beam of electrons is developed. The method relies on the build-up of surface potential on an insulating surface exposed to an electron beam. Presence of sharp edges on the…

Materials Science · Physics 2009-11-13 Joysurya Basu , C. Barry Carter , R. Divakar , Vijay B. Shenoy , N. Ravishankar

Cyclotron resonance has been measured in far-infrared transmission of GaAs/Al$_x$Ga$_{1-x}$As heterostructures with an etched hexagonal lateral superlattice. Non-linear dependence of the resonance position on magnetic field was observed as…

Mesoscale and Nanoscale Physics · Physics 2012-05-22 L. Nadvornik , M. Orlita , N. A. Goncharuk , L. Smrcka , V. Novak , V. Jurka , K. Hruska , Z. Vyborny , Z. R. Wasilewski , M. Potemski , K. Vyborny

Recent progress in large-area synthesis of monolayer molybdenum disulfide, a new two-dimensional direct-bandgap semiconductor, is paving the way for applications in atomically thin electronics. Little is known, however, about the…