Related papers: Depth profile photoemission study of thermally dif…
Understanding the atomic-scale mechanisms governing metal-mediated nucleation and growth of gallium nitride (GaN) and related alloys is critical for tailoring their structural and functional properties in advanced electronic,…
Magnetic properties of MnAs were studied as a function of temperature with a superconducting interference device (5 K to 350 K), and atomic force microscopy/magnetic force microscopy (20 K to 360 K). Structural and magnetic properties of…
We demonstrate that GaN formed in a Nanowall Network (NwN) morphology can overcome fundamental limitations in optoelectronic devices, and enable high light extraction and effective Mg incorporation for efficient p-GaN. We report the growth…
The performance of advanced magnetic tunnel junctions build of ferromagnetic (FM) electrodes and MgO as insulating barrier depends decisively on the properties of the FM/insulator interface. Here, we investigate interface formation between…
In this communication, we report results of a high resolution sputter depth profiling analysis of a stack of 16 alternating MgO and ZnO nanolayers grown by atomic layer deposition (ALD) with thickness of ~5.5 nm per layer. We used an…
We have successfully demonstrated Si/GaAs p-n heterostructures using Al2O3 ultra-thin oxide interfacial layers. The band diagram and band offsets were investigated using X-ray photoelectron spectroscopy and confirm a small discontinuity in…
The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR)…
Structural and magnetic properties of GaAs thin films with embedded MnAs nanoclusters were investigated as function of the annealing temperature and layers composition. The presence of two kinds of nanoclusters with different dimensions and…
We study light-induced nuclear spin-polarization in a thin film of Ga1-xMnxAs (x 0.04), a dilute ferromagnetic semiconductor, grown on a GaAs substrate. High-field inductively-detected Ga-71 NMR was performed with samples immersed in…
The recent observation of superconducting state at atomic scale has motivated the pursuit of exotic condensed phases in two-dimensional (2D) systems. Here we report on a superconducting phase in two-monolayer crystalline Ga films…
The structure and dynamical properties of the Fe$_3$Si/GaAs(001) interface are investigated by density functional theory and nuclear inelastic scattering measurements. The stability of four different atomic configurations of the…
Exfoliated magnetic 2D materials enable versatile tuning of magnetization, e.g., by gating or providing proximity-induced exchange interaction. However, their electronic band structure after exfoliation has not been probed, most likely due…
A mean field model of ferromagnetism mediated by delocalized or weakly localized holes in zinc-blende and wurzite diluted magnetic semiconductors is presented. The model takes into account: (i) strong spin-orbit and kp couplings in the…
The atomic interaction and magnetic properties of ultrathin Fe films grown on cleaved and polished MgO(100) surfaces were studied by conversion electron M\"{o}ssbauer spectroscopy (CEMS) in broad temperature range. Fe with different layer…
The Extreme Ultraviolet Normal Incidence Spectrograph (EUNIS) and the Hinode/ EUV Imaging Spectrometer (EIS) observed AR 11726 on 2013 April 23. We present intensity images in numerous atomic lines constructed from these observations. These…
With the aim of investigating the possible integration of opto-electronic devices, epitaxial GaN layers have been grown on Si(111) SOI and on Si/CoSi2/Si(111) using metalorganic chemical vapor deposition. The samples are found to possess a…
The magnetic properties of the diluted magnetic semiconductors (DMS) (Ga, Mn)As and (Ga, Mn)N are investigated by means of an effective Heisenberg model, whose exchange parameters are obtained from first-principle calculations. The…
We employ a kinetic-exchange tight-binding model to calculate the magnetic interaction and anisotropy energies of a pair of substitutional Mn atoms in GaAs as a function of their separation distance and direction. We find that the most…
From the new infrared (IR) reflectivity and time-domain terahertz (THz) spectra combined with available high-frequency dielectric data above the MHz range in a broad temperature range of 10-900 K, a full picture of the soft and central mode…
The electrical and magnetic properties of p-type cubic (Ga,Mn)N thin films grown by plasma-assisted molecular beam epitaxy are reported. Hole concentrations in excess of 1018 cm-3 at room temperature are observed. Activated behaviour is…