Related papers: Low temperature dephasing in irradiated metallic w…
We have performed a scanning tunneling microscopy and spectroscopy study of potassium-doped C60 monolayers (KxC60) on Ag(001) in the regime of x ~ 1. Low temperature annealing (640 K) leads to the formation of two well-ordered KxC60 phases…
We investigate tunneling through a short interacting wire. We identify two temperature regimes (a) $T_{Kondo}<T\le T^{wire}=\hbar v_F/k_Bd$ ($d$ is the length of the short wire) and (b) $T<T_{Kondo}\ll T^{wire}$. In the first regime the…
Hyperdoping Si with chalcogens is a topic of great interest due to the strong sub-bandgap absorption exhibited by the resulting material, which can be exploited to develop broadband room-temperature infrared photodetectors using fully…
The transition temperature between the low-temperature alpha phase of tin to beta tin is close to the room temperature (Tab =13C), and the difference in cohesive energy of the two phases at 0 K of about dEcoh=0.02 eV/atom is at the limit of…
We present results from cryogenic tests of Volume-Phase Holographic(VPH) gratings at 100 K. The aims of these tests are to see whether the diffraction efficiency as a function of wavelength is significantly different at a low temperature…
We report on time-resolved and steady-state photoluminescence studies of GaAs/AlGaAs V-groove quantum wire structures. Steady-state photoluminescence experiments are performed in the temperature range from 8K to 200K. We evaluate the…
In order to probe quantitatively the effect of Kondo impurities on energy exchange between electrons in metals, we have compared measurements on two silver wires with dilute magnetic impurities (manganese) introduced in one of them. The…
The investigation of the deformation behaviour of intermetallic phases is mostly limited to high temperatures due to their low ductility at ambient temperature. Therefore, within this study, nanoindentation experiments on the Al$_{2}$Cu…
A major challenge for quantum computers is the scalable simultaneous execution of quantum gates. One approach to address this in trapped ion quantum computers is the implementation of quantum gates based on static magnetic field gradients…
We analyse the effects of applying an electric field on the critical temperature, Ts, at which superionicity appears in archetypal fast ion conductor CaF2 by means of molecular dynamics simulations. We find that the onset of superionicity…
The Hall effect and resistivity of the carrier doped magnetic semiconductor Fe$_{1-x}$Co$_x$S$_2$ were measured for $0\le x \le 0.16$, temperatures between 0.05 and 300 K, and fields of up to 9 T. Our Hall data indicate electron charge…
Free-standing Bi$_2$Se$_3$ single crystal flakes of variable thickness are grown using a catalyst-free vapor-solid synthesis and are subsequently transferred onto a clean Si$^{++}$/SiO$_2$ substrate where the flakes are contacted in Hall…
Two-dimensional electron gases (2DEGs) with high mobility, engineered in semiconductor heterostructures host a variety of ordered phases arising from strong correlations, which emerge at sufficiently low temperatures. The 2DEG can be…
We report the first ever measurements of the thermalization length of low-energy electrons injected into solid para-hydrogen at a temperature \(T\approx 2.8\,\)K. The use of the pulsed Townsend photoinjection technique has allowed us to…
The properties of kagome metals are governed by the interdependence of band topology and electronic correlations resulting in remarkably rich phase diagrams. Here, we study the temperature evolution of the bulk electronic structure of the…
Single ion optical clocks have shown systematic frequency uncertainties below $10^{-18}$, but typically require more than one week of averaging to achieve a corresponding statistical uncertainty. This time can be reduced with longer probe…
The electromagnetic calorimeter of PANDA at the FAIR facility will rely on an operation of lead tungstate (PWO) scintillation crystals at temperatures near -25 deg.C to provide sufficient resolution for photons in the energy range from 8…
Specific heat measurements of hydrogenated amorphous silicon prepared by hot-wire chemical vapor deposition show a large density of two-level systems at low temperature. Annealing at 200 {\deg}C, well below the growth temperature, does not…
A variational analysis of the pure SU(N) gauge theory in 3+1 dimensions at finite temperature is performed, extending the work of Kogan, Kovner and Milhano in hep-ph/0208053 . A de-confining phase transition is found at a temperature of 470…
The paper reports on the investigations of the weak localization (WL) effects in 3D polycrystalline thin films of InSb. The films are closely compensated showing the electron concentration n>10^{16} cm^{-3} at the total concentration of the…