Related papers: Spin Susceptibility of Interacting Two-dimensional…
We measure the effective mass (m*) of interacting two-dimensional electrons confined to a 4.5 nm-wide AlAs quantum well. The electrons in this well occupy a single out-of-plane conduction band valley with an isotropic in-plane Fermi…
We report measurements of the spin susceptibility in dilute two-dimensional electrons confined to a 45$\AA$ wide AlAs quantum well. The electrons in this well occupy an out-of-plane conduction-band valley, rendering a system similar to…
Motivated by recent experimental reports, we carry out a Fermi liquid many-body calculation of the interaction induced renormalization of the spin susceptibility and effective mass in realistic two dimensional (2D) electron systems as a…
We determine the spin susceptibility in a two dimensional electron system in GaAs/AlGaAs over a wide range of low densities from 2$\times10^{9}$cm$^{-2}$ to 4$\times10^{10}$cm$^{-2}$. Our data can be fitted to an equation that describes the…
We determine the spin susceptibility $\chi$ in the weak interaction regime of a tunable, high quality, two-dimensional electron system in a GaAs/AlGaAs heterostructure. The band structure effects, modifying mass and g-factor, are carefully…
We report measurements of the spin susceptibility and the electron effective mass for two-dimensional electrons confined at the interfaces of MgxZn1-xO/ZnO single heterostructures (x = 0.05, 0.08, and 0.11), grown by molecular-beam epitaxy…
We report ballistic transport measurements in a two-dimensional electron system confined to an AlAs quantum well and patterned with square antidot lattices of period $a = $0.6, 0.8, 1.0 and 1.5 $\mu$m. In this system two in-plane…
Using available quantum Monte Carlo predictions for a strictly 2D electron gas, we have estimated the spin susceptibility of electrons in actual devices taking into account the effect of the finite transverse thickness and finding a very…
We measure the effective mass (m*) of interacting two-dimensional electrons confined to an AlAs quantum well while we change the conduction-band valley occupation and the spin polarization via the application of strain and magnetic field,…
We report measurements of the spin susceptibility, $\chi\propto g_v g^*m^*$, in an AlAs two-dimensional electron system where, via the application of in-plane stress, we transfer electrons from one conduction-band valley to another ($g_v$…
The effective mass at the Fermi level is measured in the strongly interacting two-dimensional (2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature limit in tilted magnetic fields. At low electron densities,…
The low temperature dependence of the spin and charge susceptibilities of an anisotropic electron system in two dimensions is analyzed. It is shown that the presence of inflection points at the Fermi surface leads, generically, to a $ T…
By theoretically calculating the interacting spin susceptibility of a two-dimensional electron system in the presence of finite spin polarization, we show that the extensively employed technique of measuring the 2D spin susceptibility by…
We present calculations of the frequency-dependent spin susceptibility tensor of a two-dimensional electron gas with competing Rashba and Dresselhaus spin-orbit interaction. It is shown that the interplay between both types of spin-orbit…
We have found that Fermi contours of a two-dimensional electron gas at $\rmGaAs/Al_xGa_{1-x}As$ interface deviate from a standard circular shape under the combined influence of an approximately triangular confining potential and the strong…
In a recent Letter (PRL 88, 196404 (2002)), the effective g-factor and the effective mass have been studied by Pudalov et al. in a dilute 2D electron system in silicon. The authors contrast their data with the data obtained by our group…
We report effective mass (m*) measurements, via analyzing the temperature dependence of the Shubnikov-de Haas oscillations, for dilute, interacting, two-dimensional electron systems (2DESs) occupying a single conduction-band valley in AlAs…
We have measured the effective mass, m, and Lande g-factor in very dilute two-dimensional electron systems in silicon. Two independent methods have been used: (i) measurements of the magnetic field required to fully polarize the electrons'…
The spin susceptibility of a two-dimensional electron system is calculated by determining the spin-polarization dependence of the ground-state energy within the self-consistent mean-field theory of Singwi et al. (STLS). Results are…
We find that the spin susceptibility of a two-dimensional electron system with valley degeneracy does not grow critically at low densities, at variance with experimental results [A. Shashkin et al., Phys. Rev. Lett. 96, 036403 (2006)]. We…