Related papers: Hole transport in p-type GaAs quantum dots and poi…
We study electron transport through a quantum dot in a Tomonaga-Luttinger liquid with an inhomogeneity induced either by a non-uniform electron interaction or by the presence of tunnel resistances of contacts. The non-analytic temperature…
Transport properties of a gated nanostructure depend crucially on the coupling of its states to the states of electrodes. In the case of a single quantum dot the coupling, for a given quantum state, is constant or can be slightly modified…
We present a microscopic theory for transport of the spin polarized charge density wave with both electrons and holes in the $(111)$ GaAs quantum wells. We analytically show that, contradicting to the commonly accepted belief, the spin and…
A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes,…
We report electrical transport measurements on GaAs/AlGaAs based electron-hole bilayers. These systems are expected to make a transition from a pair of weakly coupled two-dimensional systems to a strongly coupled exciton system as the…
Single and multi-band (Burt-Foreman) k.p Hamiltonians for GaAs crystal phase quantum dots are developed and used to assess ongoing experimental activity on the role of such factors as quantum confinement, spontaneous polarization, valence…
We describe a technique for connecting a nanometer-scale gold grain to leads by atomic-scale gold point contacts. These devices differ from previous metallic quantum dots in that the conducting channels are relatively well-transmitting. We…
We study transport through multiply coupled carbon nano-tubes (quantum wires) and compute the conductances through the two wires as a function of the two gate voltages $g_1$ and $g_2$ controlling the chemical potential of the electrons in…
Low temperature transport measurements on a p-GaAs quantum point contact are presented which reveal the presence of a conductance anomaly that is markedly different from the conventional `0.7 anomaly'. A lateral shift by asymmetric gating…
We have studied electron transport in clean single-walled carbon nanotube quantum dots. Because of the large number of Coulomb blockade diamonds simultaneously showing both shell structure and Kondo effect, we are able to perform a detailed…
GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly-confined 0D and…
We report here the charge transport behavior in graphene nanojunctions in which graphene nanodots, with relatively long relaxation time, are interfaced with ferromagnetic electrodes. Subsequently we explore the effect of substitutional…
We present transport experiments performed in high quality quantum point contacts embedded in a GaAs two-dimensional hole gas. The strong spin-orbit interaction results in peculiar transport phenomena, including the previously observed…
We compute the electronic and emission properties of Coulomb-correlated multi-particle states (X$^0$, X$^\pm$, XX) in weakly confining GaAs/AlGaAs quantum dots using an 8-band $\mathbf{k}\!\cdot\!\mathbf{p}$ model coupled to continuum…
We investigate the transport properties of a (small) quantum dot connected to Fermi liquid leads with a power-law density of states (DOS). Such a system, if experimentally realizable, will have interesting physical properties including: (i)…
Quantum dots connected to larger systems containing a continuum of states like charge reservoirs allow the theoretical study of many-body effects such as the Coulomb blockade and the Kondo effect. Here, we analyze the nonequilibrium Kondo…
Spintronics devices rely on spin-dependent transport behavior evoked by the presence of spin-polarized electrons. Transport through nanostructures, on the other hand, is dominated by strong Coulomb interaction. We study a model system in…
We performed measurements on a quantum dot and a capacitively coupled quantum point contact by using the sharp metallic tip of a low-temperature scanning force microscope as a scanned gate. The quantum point contact served as a detector for…
We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more…
Coulomb blockade resonances are measured in a GaAs quantum dot in which both shape deformations and interactions are small. The parametric evolution of the Coulomb blockade peaks shows a pronounced pair correlation in both position and…