Related papers: Electric field gradient induced effects in GaAs/Al…
Modulation-doped AlGaAs/GaAs heterostructures are utilized extensively in the study of quantum transport in nanostructures, but charge fluctuations associated with remote ionized dopants often produce deleterious effects. Electric…
Detailed experimental studies of the conductance of mesoscopic GaAs devices in the few-mode regime reveal a novel thermal effect: for temperatures up to at least 10 K the measured gate characteristics, i.e. conductance $G$ versus gate…
This follow-on work investigates the effect of temperature on the frequency limit of 2-dimensional electron gas (2DEG) Hall-effect sensors.
At low densities, electrons confined to two dimensions in a delta-doped heterostructure can arrange themselves into self-consistent droplets due to disorder and screening effects. We use this observation to show that at low temperatures,…
We report experimental studies of conductance and magnetoconductance of GaAs/AlGaAs quantum well structures where both wells and barriers are doped by acceptor impurity Be. Temperature dependence of conductance demonstrate a non-monotonic…
The search for particle electric dipole moments represents a most promising way to search for physics beyond the standard model. A number of groups are planning a new generation of experiments using stored gases of various kinds. In order…
We report experimental observation of an unexpectedly large thermopower in mesoscopic two-dimensional (2D) electron systems on GaAs/AlGaAs heterostructures at sub-Kelvin temperatures and zero magnetic field. Unlike conventional non-magnetic…
An effect we have termed the acousto-thermoelectric effect is theorized for temperature gradients driven by acoustic modulation. The effect produces a dynamic and spatially varying voltage. Adiabatic acoustic fluctuations in a solid cause…
The photovoltaic effect induced by terahertz radiation in a gated two-dimensional electron gas in magnetic field is considered theoretically. It is assumed that the incoming radiation creates an ac voltage between the source and gate and…
Theoretical investigation of thermodynamic properties of electrically modulated monolayer graphene in the presence of a perpendicular magnetic field B is presented.This work is aimed at determining the modulation induced effects on the…
GaAs-based two-dimensional electron gases (2DEGs) show a wealth of remarkable electronic states, and serve as the basis for fast transistors, research on electrons in nanostructures, and prototypes of quantum-computing schemes. All these…
In this work, we experimentally investigate the frequency limit of Hall effect sensor designs based on a 2 dimensional electron gas (2DEG) gallium arsenide/aluminum gallium arsenide (GaAs/AlGaAs) heterostructure. The frequency limit is…
Nonlinear multiscale gyrokinetic simulations of a Joint European Torus edge pedestal are used to show that electron-temperature-gradient (ETG) turbulence has a rich three-dimensional structure, varying strongly according to the local…
Warming in complex physical systems, in particular global warming, attracts significant contemporary interest. It is essential, therefore, to understand basic physical mechanisms leading to overheating. It is well known that application of…
Conditions required for the streaming effect and the optical-phonon transit-time resonance to take place in a compensated bulk GaN are analyzed in detail. Monte Carlo calculations of the high-frequency differential electron mobility are…
The amplitude V_0 of unidirectional periodic potential modulation introduced by a surface grating into a two-dimensional electron gas (2DEG) formed at AlGaAs/GaAs heterointerface is measured as a function of electron density n_e by…
A two-dimensional (2D) electron gas formed in a modulation-doped GaAs/AlGaAs single quantum well undergoes a first-order transition when the first excited subband is occupied with electrons, as the Fermi level is tuned into resonance with…
The effect of a DC electric field on the longitudinal resistance of highly mobile two dimensional electrons in heavily doped GaAs quantum wells is studied at different magnetic fields and temperatures. Strong suppression of the resistance…
The temperature dependence of phonon-induced resistance oscillations has been investigated in two-dimensional electron system with moderate mobility at large filling factors at temperature range T = 7.4 - 25.4 K. The amplitude of…
It is shown that the observed Quantum Hall Effect in epitaxial layers of heavily doped n-type GaAs with thickness (50-140 nm) larger the mean free path of the conduction electrons (15-30 nm) and, therefore, with a three-dimensional…