Related papers: Spin-Dependent Scattering off Neutral Antimony Don…
We studied the spin-dependent quantum transport properties using a simple modelling of a Datta-Das spin transistor. We refine previous results by accounting the propagation medium changes of opacity felt by itinerant electrons, when the…
Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent…
Pulsed electrically-detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B > 8.5 T) and low temperatures (T = 2.8 K) is presented. We find that the spin-dependent capture and reemission…
We report thermodynamic magnetization measurements of two-dimensional electrons in several high mobility Si metal-oxide-semiconductor field-effect transistors. We provide evidence for an easily polarizable electron state in a wide density…
We have developed a theory of Raman scattering with single and double spin flips of localized resident electrons and holes as well as nonequilibrium localized excitons in semiconductor perovskite crystals under optical excitation in the…
The experimental sensitivity to $\mu \to e$ conversion will improve by four or more orders of magnitude in coming years, making it interesting to consider the "spin-dependent" (SD) contribution to the rate. This process does not benefit…
While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on-chip AC electric fields. For electrons in bulk silicon, SOC…
The presence of a large applied magnetic field removes the degeneracy of the vacuum energy states for spin-up and spin-down neutrons. For polarized neutron reflectometry, this must be included in the reference potential energy of the…
The electrical detection of spin echoes via echo tomography is used to observe decoherence processes associated with the electrical readout of the spin state of phosphorus donor electrons in silicon near a SiO$_2$ interface. Using the…
The conductance resulting from resonant tunneling through a droplet of $N \sim 30$ electrons is used to measure its chemical potential $\mu_N$. Abrupt shifts of $\mu_N$ occur at sharply defined values of the magnetic field, at which the…
We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation…
A microscopic picture of electron-electron pair scattering in single mode quantum wires is introduced which includes electron spin. A new source of `excess' noise for hot carriers is presented. We show that zero magnetic field `spin'…
We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate…
We propose, theoretically, a new type of quantum field effect transistor that operates purely on the flow of spin current in the absence of charge current. This spin field effect transistor (SFET) is constructed without any magnetic…
Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors,…
We unravel theoretically a key intrinsic relaxation mechanism among the low-lying singlet and triplet donor-pair states in silicon, an important element in the fast-developing field of spintronics and quantum computation. Despite the…
We study single- and multi-quantum transitions of the nuclear spins of ionized arsenic donors in silicon and find quadrupolar effects on the coherence times, which we link to fluctuating electrical field gradients present after the…
We present a theoretical study of elastic spin-dependent electron scattering caused by a nonuniform Rashba spin-orbit coupling strength. Using the spin-generalized method of partial waves the scattering amplitude is exactly derived for the…
We study the field-angle resolved electronic Raman scattering in 2-dimensional d-wave superconducting vortex states theoretically by quasi-classical approximation, the so-called Doppler-shift method. An analytic expression is obtained for…
We study the effects of spin-flip scatterings on the time-dependent transport properties through a magnetic quantum dot attached to normal and ferromagnetic leads. The transient spin-dynamics as well as the steady-state tunneling…