Related papers: Inelastic Scattering and Spin Polarization in Dilu…
(Ga,Mn)As and related diluted magnetic semiconductors play a major role in spintronics research because of their potential to combine ferromagnetism and semiconducting properties in one physical system. Ferromagnetism requires ~1-10% of…
Using a novel technique, we make quantitative measurements of the spin polarization of dilute (3.4 to 6.8*10^{10} cm^{-2}) GaAs (311)A two-dimensional holes as a function of an in-plane magnetic field. As the field is increased the system…
The magnetoresistance of a low carrier density, disordered GaAs based two-dimensional (2D) electron gas has been measured in parallel magnetic fields up to 32 T. The feature in the resistance associated with the complete spin polarization…
The magnitude of the anisotropic magnetoresistance (AMR) and the longitudinal resistance in compressively strained (Ga0.95, Mn0.05)As epilayers were measured for the first time down to temperatures as low as 30 mK. Below temperatures of 3K…
We study the transport properties of a voltage biased contact between two spin-split superconductors separated by an insulating barrier of arbitrary transparency. At low transparency, the contribution of multiple Andreev reflections leads…
Using the point contact Andreev reflection technique, we have carried out a systematic study of the spin polarization in the colossal magnetoresistive manganite, La$_{0.7}$Sr$_{0.3}$MnO$_{3}$} (LSMO). Surprisingly, we observed a significant…
We report electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular…
We report neutron diffraction measurements of Ca$_{0.6}$Sr$_{0.4}$MnSb$_2$, a low-carrier-density Dirac semimetal in which the antiferromagnetic Mn layers are interleaved with Sb layers that host Dirac fermions. We have discovered that we…
The electronic structure of diluted (Ga,Mn)As magnetic semiconductors in the presence of As-antisites and magnetic disorder is studied within the framework of the local spin density approximation. Both the chemical and magnetic disorders…
The dynamics of magnetization under femtosecond optical excitation is studied in a ferromagnetic semiconductor Ga_{0.94}Mn_{0.06}As with a time-resolved magneto-optical Kerr effect measurement with two color probe beams. The transient…
The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x < 3%. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion…
We present a numerical study of magnetic phases of the 2D electron gas near freezing. The calculations are performed by diffusion Monte Carlo in the fixed node approximation. At variance with the 3D case we find no evidence for the…
We studied the diluted magnetic semiconductor by the self-consistent Green's function approach, which treats the spin-wave kinematics appropriately at finite temperatures. The critical temperature can be obtained by a simple formula in a…
The setup, capabilities and operation parameters of the neutron reflectometer GINA, the recently installed "Grazing Incidence Neutron Apparatus" at the Budapest Neutron Centre, are introduced. GINA, a dance-floor-type, constant-energy,…
We present a theoretical study of diluted magnetic semiconductors that includes spin-orbit coupling within a realistic host band structure and treats explicitly the effects of disorder due to randomly substituted Mn ions. While spin-orbit…
Spin-polarized photoemission from wurtzite and zinc-blende gallium nitride (GaN) photocathodes has been observed and measured for the first time. The p-doped GaN photocathodes were epitaxially grown and activated to negative electron…
Spin dynamics in ferromagnetic $p$-(Ga,Mn)As ($x$ = 0.011, $T_{C}$ = 30 K) has been studied by carefully comparing the decay time of the photo-induced reflectivity change with the transient behavior of polar Kerr rotation induced by…
The spin-dependent recombination (SDR) has been observed in GaAs_{1-x}N_{x} (x = 2.1, 2.7, 3.4%) at room temperature. It reveals itself in a decrease of the edge photoluminescence (PL) intensity by more than a factor of 3 when either the…
We present measurements of the transport spin polarization of Ni_xFe_{1-x} (0<x<1) using the recently-developed Point Contact Andreev Reflection technique, and compare them with our first principles calculations of the spin polarization for…
We present a general unifying theory for spin polarization decay due to the interplay of spin precession and momentum scattering that is applicable to both spin-1/2 electrons and spin-3/2 holes. Our theory allows us to identify and…