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We propose a non-destructive means of characterizing a semiconductor wafer via measuring parameters of an induced quantum dot on the material system of interest with a separate probe chip that can also house the measurement circuitry. We…

Mesoscale and Nanoscale Physics · Physics 2019-04-22 Yun-Pil Shim , Rusko Ruskov , Hilary M. Hurst , Charles Tahan

Physical systems representing qubits typically have one or more accessible quantum states in addition to the two states that encode the qubit. We demonstrate that active involvement of such auxiliary states can be beneficial in constructing…

Quantum Physics · Physics 2014-04-04 Dmitry Solenov , Sophia E. Economou , Thomas L. Reinecke

We have studied interactions between two capacitively coupled GaAs/AlGaAs few-electron double quantum dots. Each double quantum dot defines a tunable two-level system, or qubit, in which a single excess electron occupies either the ground…

Mesoscale and Nanoscale Physics · Physics 2009-07-15 K. D. Petersson , C. G. Smith , D. Anderson , P. Atkinson , G. A. C. Jones , D. A. Ritchie

We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel…

We study electron transport through a quantum interferometer with side-coupled quantum dots. The interferometer, threaded by a magnetic flux $\phi$, is attached symmetrically to two semi-infinite one-dimensional metallic electrodes. The…

Mesoscale and Nanoscale Physics · Physics 2010-12-17 Santanu K. Maiti

A double-quantum-dot coupled to electrodes with spin-dependent splitting of chemical potentials (spin bias) is investigated theoretically by means of the Green's functions formalism. By applying a large spin bias, the quantum spin in a…

Mesoscale and Nanoscale Physics · Physics 2008-06-16 Hai-Zhou Lu , Shun-Qing Shen

We present a scheme for creating and measuring entanglement between two double quantum dot charge qubits in a transport set-up in which voltage pulses can modify system parameters. Detection of entanglement is performed via the construction…

Mesoscale and Nanoscale Physics · Physics 2009-10-27 Clive Emary

We present a set of concrete and realistic ideas for the implementation of a small-scale quantum computer using electron spins in lateral GaAs/AlGaAs quantum dots. Initialization is based on leads in the quantum Hall regime with tunable…

We present transport measurements through an electrostatically defined bilayer graphene double quantum dot in the single electron regime. With the help of a back gate, two split gates and two finger gates we are able to control the number…

Mesoscale and Nanoscale Physics · Physics 2020-04-22 Luca Banszerus , Samuel Möller , Eike Icking , Kenji Watanabe , Takashi Taniguchi , Christian Volk , Christoph Stampfer

A serial triple quantum dot (TQD) electrostatically defined in a GaAs/AlGaAs heterostructure is characterized by using a nearby quantum point contact as charge detector. Ground state stability diagrams demonstrate control in the regime of…

Mesoscale and Nanoscale Physics · Physics 2007-09-03 D. Schröer , A. D. Greentree , L. Gaudreau , K. Eberl , L. C. L. Hollenberg , J. P. Kotthaus , S. Ludwig

We investigate the characteristics of purely electrostatic interactions with external gates in constructing full single qubit manipulations. The quantum bit is naturally encoded in the spatial wave function of the electron system.…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 A. Weichselbaum , S. E. Ulloa

We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm…

Mesoscale and Nanoscale Physics · Physics 2016-05-26 T. A. Baart , P. T. Eendebak , C. Reichl , W. Wegscheider , L. M. K. Vandersypen

A quantum wire is fabricated on (001)-GaAs at the intersection of two overgrown cleaves. The wire is contacted at each end to n+ GaAs layers via two-dimensional (2D) leads. A sidegate controls the density of the wire revealing conductance…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 S. F. Roth , H. J. Krenner , D. Schuh , M. Bichler , M. Grayson

As a possible physical realization of a quantum information processor, a system with stacked self-assembled InAs quantum dots buried in GaAs in adjacent to the channel of a spin field-effect transistor has been proposed. In this system,…

Mesoscale and Nanoscale Physics · Physics 2009-03-19 Kazuya Yuasa , Kosuke Okano , Hiromichi Nakazato , Saori Kashiwada , Kanji Yoh

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a novel flip chip…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 E. Bielejec , J. A. Seamons , J. L. Reno , M. P. Lilly

Two tunnel-coupled few-electron quantum dots were fabricated in a GaAs/AlGaAs quantum well. The absolute number of electrons in each dot could be determined from finite bias Coulomb blockade measurements and gate voltage scans of the dots,…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 I. H. Chan , P. Fallahi , A. Vidan , R. M. Westervelt , M. Hanson , A. C. Gossard

We study entanglement of charge qubits in a vertical tunnel-coupled double quantum dot containing two interacting electrons. Exact diagonalization is used to compute the negativity characterizing entanglement. We find that entanglement can…

Other Condensed Matter · Physics 2007-05-23 S. Weiss , M. Thorwart , R. Egger

We devise an autonomous quantum thermal machine consisting of three pairwise-interacting qubits, two of which are locally coupled to thermal reservoirs. The machine operates autonomously, as it requires no time-coherent control, external…

We report measurements of the compressibility of a one-dimensional (1D) quantum wire, defined in the upper well of a GaAs/AlGaAs double quantum well heterostructure. A wire defined simultaneously in the lower well probes the ability of the…

Mesoscale and Nanoscale Physics · Physics 2015-05-30 L. W. Smith , A. R. Hamilton , K. J. Thomas , M. Pepper , I. Farrer , J. P. Griffiths , G. A. C. Jones , D. A. Ritchie

The discovery of the fractional quantum Hall effect in GaAs-based semiconductor devices has lead to new advances in condensed matter physics, in particular the possibility for exotic, topological phases of matter that possess fractional,…

Mesoscale and Nanoscale Physics · Physics 2015-06-05 Z. Papic , D. A. Abanin , Y. Barlas , R. N. Bhatt