Related papers: Mechanism of Ambipolar Field-Effect Transistors on…
Motivated by the experimental realization of synthetic spin-orbit coupling for ultracold atoms, we investigate the phase diagram of the Bose Hubbard model in a non-abelian gauge field in two dimensions. Using a strong coupling expansion in…
We show that the Mott transition occurring in bosonic Hubbard models can be successfully described by a simple variational wave function that contains all important long-wavelength correlations. Within this approach, a smooth…
The two-orbital degenerate Hubbard model with distinct hopping integrals is studied by combining dynamical mean-field theory with quantum Monte Carlo simulations. The role of orbital fluctuations for the nature of the Mott transition is…
Unravelling the nature of doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. For this purpose, we study the evolution of…
An analysis of Luttinger's theorem shows that -- contrary to recent claims -- it is not valid for a generic Mott insulator. For a two-orbital Hubbard model with two electrons per site the crossover from a non-magnetic correlated insulating…
The one dimensional Bose-Hubbard model at a unit filling factor is studied by means of a very high order symbolic perturbative expansion. Analytical expressions are derived for the ground state quantities such as energy per site, variance…
We investigate the Hubbard model on the honeycomb lattice with intrinsic spin orbit interactions as a paradigm for two-dimensional topological band insulators in the presence of interactions. Applying a combination of Hartree-Fock theory,…
Schottky barriers are often formed at the semiconductor/metal contacts and affect the electrical behaviour of semiconductor devices. In particular, Schottky barriers have been playing a major role in the investigation of the electrical…
Elucidating the physics of the single-orbital Hubbard model in its intermediate coupling regime is a key missing ingredient to our understanding of metal-insulator transitions in real materials. Using recent non-perturbative many-body…
In Mott insulators with a half-filled $t_{2g}$ shell the Hund's rule coupling induces a spin-3/2 orbital-singlet ground state. The spin-orbit interaction is not expected to qualitatively impact low-energy degrees of freedom in such systems.…
We investigate the ground-state properties of the one-dimensional two-band Hubbard model with different bandwidths. The density-matrix renormalization group method is applied to calculate the averaged electron occupancies $n$ as a function…
The low-energy properties of transition metal oxides (TMOs) are governed by the electrons occupying strongly correlated $d$-orbitals that are hybridized with surrounding ligand oxygen $p$ orbitals to varying degrees. Their physics is thus…
Vortex lines in superconductors in an external magnetic field slightly tilted from randomly-distributed parallel columnar defects can be modeled by a system of interacting bosons in a non-Hermitian vector potential and a random scalar…
We present a theory of Mott memristors whose working principle is the non-linear carrier avalanche multiplication in Mott insulators subject to strong electric fields. The internal state of the memristor, which determines its resistance, is…
At the Mott transition, electron-electron interaction changes a metal, in which electrons are itinerant, to an insulator, in which electrons are localized. This phenomenon is central to quantum materials. Here we contribute to its…
We employ density functional theory plus dynamical mean field theory and identify the physical origin of why two layers of SrVO$_3$ on a SrTiO$_3$ substrate are insulating: the thin film geometry lifts the orbital degeneracy which in turn…
We explore novel topological responses and axion-like phenomena in three-dimensional insulating systems with spacetime-dependent mass terms encoding domain walls. Via a dimensional-reduction approach, we derive a new axion-electromagnetic…
Spectral properties of the Bose-Hubbard model and a recently proposed coupled-cavity model are studied by means of quantum Monte Carlo simulations in one dimension. Both models exhibit a quantum phase transition from a Mott insulator to a…
We study the tunneling density of states (TDOS) in one-dimensional Mott insulators at energies below the charge gap. By employing nonlinear Luttinger liquid theory and density-matrix renormalization group (DMRG) simulations, we predict that…
Black phosphorous (BP) is is recently unveiled as a promising two-dimensional direct bandgap semiconducting material. Here, we report the ambipolar field effect transistor behavior of multilayers of BP with ferromagnetic tunnel contacts. We…