Related papers: Dynamic Spin-Polarized Resonant Tunneling in Magne…
We experimentally investigate the structural, magnetic and electrical transport properties of La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ based magnetic tunnel junctions with a SrSnO$_3$ barrier. Our results show that despite the large number of…
Conventional and spin-related thermoelectric effects in transport through a magnetic tunnel junction with a large-spin impurity, such as a magnetic molecule or atom, embedded into the corresponding barrier are studied theoretically in the…
First-principles density functional calculations show that the $\textrm{SrRuO}_{3}/\textrm{PbTiO}_{3}/\textrm{SrRuO}_{3}$ multiferroic junction with asymmetric (RuO$_{2}$/PbO and TiO$_{2}$/SrO) interfaces has a large ferroelectric…
We consider the effect of electron correlations on tunneling from a 2D electron layer in a magnetic field parallel to the layer. A tunneling electron can exchange its momentum with other electrons, which leads to an exponential increase of…
The influence of ballistic channels superimposed on tunneling conduction channels in magnetic tunnel junctions has been studied in a manganese oxide based tunneling device. Inversion of magnetoresistance has been observed in magnetic tunnel…
Using a simple quantum-mechanical model, we explore a tunneling anisotropic magnetoresistance (TAMR) effect in ferroelectric tunnel junctions (FTJs) with a ferromagnetic electrode and a ferroelectric barrier layer, which spontaneous…
Tunneling spectroscopy is applied to tunnel junctions with only one or no ferromagnetic electrode to study the excitation of quasi particles in magnetic tunnel junctions. The bias dependence is investigated with high accuracy by inelastic…
Quantum tunneling between two potential wells in a magnetic field can be strongly increased when the potential barrier varies in the direction perpendicular to the line connecting the two wells and remains constant along this line. An…
We consider a ring of strongly interacting electrons connected to two external leads by tunnel junctions. By studying the positions of conductance resonances as a function of gate voltage and magnetic flux the interaction parameter $g$ can…
We study tunneling of electrons into and between interacting wires in the spin-incoherent regime subject to a magnetic field. The tunneling currents follow power laws of the applied voltage with exponents that depend on whether the electron…
We propose altermagnet-superconductor junctions as a way to achieve a thermoelectric response in metals free of external or stray magnetic fields. We combine qualitative analysis in a simplified model with a more rigorous approach based on…
Experiments have shown that the tunneling current in a Co/Al$_2$O$_3$ magnetic tunneling junction (MTJ) is positively spin polarized, opposite to what is intuitively expected from standard tunneling theory which gives the spin polarization…
A theory for boson-assisted tunneling via randomly distributed resonant states in a layered metals is developed. As particular examples, we consider the electron-phonon interaction and the interaction between localized and conduction…
The qualities of electron refrigeration by means of tunnel junctions between superconducting and normal--metal electrodes are studied theoretically. A suitable approximation of the basic expression for the heat current across those tunnel…
We provide a characterization of tunneling between coupled topological insulators in 2D and 3D under the influence of a ferromagnetic layer. We explore conditions for such systems to exhibit integer quantum Hall physics and localized…
We investigated electroforming-free bipolar resistive switching behavior in Pt/Ti/Al2O3/Al tunnel junctions where the Al2O3 tunnel barrier was naturally formed on Al in air. Various compliance current values for the junction's set switching…
Controlling electronic transport through a single-molecule junction is crucial for molecular electronics or spintronics. In magnetic molecular devices, the spin degree-of-freedom can be used to this end since the magnetic properties of the…
Two channels of the sd exchange interaction are considered in magnetic junctions. The first channel describes the interaction of transversal spins with the lattice magnetization. The second one describes the interaction of longitudinal…
The universal oscillation of the tunnel magnetoresistance (TMR) ratio as a function of the insulating barrier thickness in crystalline magnetic tunnel junctions (MTJs) is a long-standing unsolved problem in condensed matter physics. To…
To test the quality of a tunnel junction, one sometimes fits the bias-dependent differential conductance to a theoretical model, such as Simmons's formula. Recent experimental work by {\AA}kerman and collaborators, however, has demonstrated…