Related papers: Spiral growth, two-dimensional nucleation, and the…
We study analytically and numerical the growth rate of a crystal surface growing by several screw dislocations. To describe several spiral steps we use the revised level set method for spirals by the authors (Journal of Scientific Computing…
Step meandering due to a deterministic morphological instability on vicinal surfaces during growth is studied. We investigate nonlinear dynamics of a step model with asymmetric step kinetics, terrace and line diffusion, by means of a…
Spiral surface growth is well understood in the limit where the step motion is controlled by the local supersaturation of adatoms near the spiral ridge. In epitaxial thin-film growth, however, spirals can form in a step-flow regime where…
A solid-on-solid model of epitaxial growth in 1+1 dimensions is investigated in which slope dependent upward and downward particle currents compete on the surface. The microscopic mechanisms which give rise to these currents are the…
We use analytic formulae obtained from a simple model of crystal growth by molecular--beam epitaxy to determine step--edge barriers to interlayer transport. The method is based on information about the surface morphology at the onset of…
\emph{Wolf-Villain (WV) model} is a simple model used to study \emph{ideal} molecular beam epitaxy (MBE) growth by using computer simulations. In this model, an adatom diffuses instantaneously within a finite diffusion length to maximize…
We tackle the question of whether the presence of particles in a pipe flow can influence the linear transient growth of infinitesimal perturbations, in view of better understanding the behaviour of particulate pipe flows in regimes of…
Normal incidence 1 keV Ar$^+$ ion bombardment leads to amorphization and ultrasmoothing of Ge at room temperature, but at elevated temperatures the Ge surface remains crystalline and is unstable to the formation of self-organized nanoscale…
Growth-induced pattern formations in curved film-substrate structures have attracted extensive attentions recently. In most existing literature, the growth tensor is assumed to be homogeneous or piecewise homogeneous. In this paper, we aim…
Kinetic Monte Carlo simulation in conjunction with molecular dynamics simulation is utilized to study the effect of the steered deposition on the growth of Cu on Cu(1,1,17). It is found that the deposition flux becomes inhomogeneous in step…
Abstract Self-similar, fractal nature of turbulence is discussed in the context of two dimensional turbulence, by considering the fractal structure of the wave-number domain using spirals. In loose analogy with phyllotaxis in plants, each…
Mound formation on flat and miscut crystal surfaces exhibits distinct growth behaviors. While mound structures are the predominant feature on flat surfaces, miscut surfaces display a smooth transition from meandered patterns to…
I describe a semi-empirical molecular model of the surface attachment kinetics governing ice crystal growth from water vapor as a function of temperature, supersaturation, and crystal mesostructure. An important new hypothesis in this model…
We consider the effect of nucleation on a one-dimensional stepped surface, finding that step-flow growth is metastable for any strength of the additional step-edge barrier. The surface is made unstable by the formation of a critical…
To obtain crystalline thin films of alpha-Quartz represents a challenge due to the tendency for the material towards spherulitic growth. Thus, understanding the mechanisms that give rise to spherulitic growth can help regulate the growth…
The development of epitaxy techniques for localized growth of crystalline silicon nanofilms and nanostructures has been crucial to recent advances in electronics and photonics. A precise definition of the crystal growth location, however,…
We study irreversible dimer nucleation on top of terraces during epitaxial growth in one and two dimensions, for all values of the step-edge barrier. The problem is solved exactly by transforming it into a first passage problem for a random…
The morphological evolution of hillocks at the unpassivated sidewalls of the single crystal metallic thin films is investigated via computer simulations by using the free-moving boundary value problem. The effects of the drift-diffusion…
Normal incidence ion irradiation at elevated temperatures, when amorphization is prevented, induces novel nanoscale patterns of crystalline structures on elemental semiconductors by a reverse epitaxial growth mechanism: on Ge surfaces…
We study the behavior of single atoms on an infinite vicinal surface assuming certain degree of step permeability. Assuming complete lack of re-evaporation an ruling out nucleation the atoms will inevitably join kink sites at the steps but…