Related papers: Spin-Filtering Multiferroic-Semiconductor Heteroju…
We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and…
We calculated a spin-polarized conductance in the almost unexplored nanostructure "high temperature ferromagnetic insulator/ graphene/ ferroelectric film" with a special attention to the impact of electric polarization rotation in a…
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…
Large spin splitting at Rashba interface, giving rise to strong spin-momentum locking, is essential for efficient spin-to-charge conversion. Recently, a Cu/Bismuth oxide (Bi2O3) interface has been found to exhibit an efficient…
The electronic band structures of orthorhombic (oP28) and monoclinic (mC28) MnSb_2S_4 were investigated with ab initio calculations in the local spin density approximation (LSDA) to the density functional theory (DFT). An analysis of the…
We identify hexagonal YMnO$_3$ as a material realization of the elusive $\beta$-phase of unconventional magnetism, a noncollinear, noncoplanar antiferromagnetic state defined by intrinsic spin-momentum locking and a topological spin…
Electronic, lattice, and spin interactions at the interfaces between crystalline complex transition metal oxides can give rise to a wide range of functional electronic and magnetic phenomena not found in bulk. At hetero-interfaces, these…
Atomically sharp oxide heterostructures exhibit a range of novel physical phenomena that do not occur in the parent bulk compounds. The most prominent example is the appearance of highly conducting and superconducting states at the…
Analyzing spin transport of quasi-2D electrons gas moving through a semiconductor wave guide subject to a sectionally homogeneous tilted magnetic field, we found well-defined selection rules for resonant and antiresonant spin carrier…
We present results of local spin density approximation pseudopotential calculations for the ferroelectromagnet, yttrium manganite (YMnO3). The origin of the differences between ferroelectric and non-ferroelectric perovskite manganites is…
We theoretically studied the in-plane tunneling spectroscopy of the hybrid structure composed of a metal and a semiconductor with Rashba spin-orbit coupling. We found that the energy spacing between two distinct features in the conductance…
By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An…
Effects of coupling between phonon distortions and stripe-like spin waves in the CuO plane of HgBa$_2$CuO$_4$ are studied by band calculations. Local exchange enhancements depend sensitively on the local structure around Cu sites.…
Diamond and gallium nitride are complementary semiconductors for forming p-n junctions because of their respective doping limitations. Understanding the band alignment of grafted diamond/GaN heterojunctions is therefore essential for…
We investigate the nonequilibrium transport properties of a silicene armchair nanoribbon with a random distribution of adsorbed atoms in apex positions. A ferromagnetic insulator grown below the nanoribbon splits spin-up and spin-down…
We demonstrate a spin diode consisting of a semiconductor free nano-scale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data…
Taking into account the available experimental results, we model the electronic properties and current-voltage characteristics of a ferromagnet-semiconductor junction. The Fe/GaAs interface is considered as a Fe/(i-GaAs)/n+-GaAs/n-GaAs…
We present a laterally resolved X-ray magnetic dichroism study of the magnetic proximity effect in a highly ordered oxide system, i.e. NiO films on Fe3O4(110). We found that the magnetic interface shows an ultrasharp electronic, magnetic…
We report on the interfacial electronic properties of HfO2 gate dielectrics both, with GaN towards normally-OFF recessed HEMT architectures and the AlGaN barrier for normally-ON AlGaN/GaN MISHEMTs for GaN device platforms on Si. A…
We study the physical properties of a half-metallic ferromagnet$\mid$superconductor (HM$\mid$S) bilayer, allowing for an arbitrary bulk pairing symmetry of the superconductor and spin-dependent processes at the interface. In particular, we…