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The transport and thermoelectric properties of the interface between SrTiO$_3$ and a 26-monolayer thick LaAlO$_3$-layer grown at high oxygen-pressure have been investigated at temperatures from 4.2 K to 100 K and in magnetic fields up to 18…
Ferroelectric tunnel junctions (FTJs) have attracted increasing research interest as a promising candidate for non-volatile memories. Recently, significant enhancements of tunneling electroresistance (TER) have been realized through…
The inhomogeneous 3-Kelvin (3K) phase of the eutectic Sr2RuO4 with Ru inclusions nucleates superconductivity at the interface between Ru and Sr2RuO4. The structure of the interface state and its physical properties are examined here. Two…
Detail transport properties of graphene/MoS2/metal vertical heterostructure have been investigated. The van der Waals interface between the graphene and MoS2 exhibits Schottky barrier. The application of gate voltage to the graphene layer…
Understanding quantitatively the heating dynamics in magnetic tunnel junctions (MTJ) submitted to current pulses is very important in the context of spin-transfer-torque magnetic random access memory development. Here we provide a method to…
When a charge current is applied to a junction comprising two different conductors, its temperature increases or decreases depending on the direction of the charge current. This phenomenon is called the Peltier effect, which is used in…
We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barrier contact. We find the clear difference in the…
We present a detailed analysis of the structure dependence of the lattice thermal conductivity of SrTiO3. We have used both ab initio Molecular Dynamic simulations and Density Functional Theory calculations to decouple the effect of…
The Schottky barrier heights (SBHs) of defect-free interfaces of ZnO, CdO, MgO and SrO with various metals and different terminations are investigated by density functional supercell calculations. The oxide bands are corrected for their…
First-principles calculations based on density-functional theory in the pseudo-potential approach have been performed for the total energy, crystal structure and cell polarization for SrTaO$_2$N/SrTiO$_3$ heterostructures. Different…
This work presents electrothermal co-design of vertical \b{eta}-Ga2O3 Schottky barrier diodes (SBDs) to enhance both heat dissipation and high field management in high-power applications. Here, we demonstrate device-level thermal management…
Heterointerfaces of SrTiO$_{3}$ with other transition metal oxides make up an intriguing family of systems with a bounty of coexisting and competing physical orders. Some examples, such as LaAlO$_{3}$/SrTiO$_{3}$, support a high carrier…
Temperature dependence of the tunnel magnetoresistance (TMR) was calculated in range of the quantum-ballistic model in the magnetic tunnel junctions (MTJs) with embedded nanoparticles (NPs). The electron tunnel transport through NP was…
Poisson statistics predicts that the shot noise in a tunnel junction has a temperature independent third cumulant e^2\I, determined solely by the mean current I. Experimental data, however, show a puzzling temperature dependence. We…
The limited operational range of phase transition-based luminescence thermometers necessitates the exploration of new host materials exhibiting first-order structural phase transitions to broaden the applicability of this approach.…
The emerging material class of complex-oxides, where manipulation of physical properties lead to new functionalities at their heterointerfaces, is expected to open new frontiers in Spintronics. For example, SrRuO_3 is a promising material…
We report on the use of the LaAlO3 (LAO) high-k dielectric as a tunnel barrier in magnetic tunnel junctions. From tunnel magnetoresistance (TMR) measurements on epitaxial La2/3Sr1/3MnO3/LAO/La2/3Sr1/3MnO3 junctions, we estimate a spin…
Ferromagnetic resonance and static magnetic properties of CoFe/Al2O3/CoFe/Py and CoFe/Al2O3/CoFeB/Py magnetic tunnel junctions and of 25nm thick single-layer Permalloy(Py) films have been studied as a function of temperature down to 2K. The…
Epitaxial superlattices of ferromagnetic/paramagnetic La$_{0.67}$Sr$_{0.33}$MnO$_3$/SrIrO$_3$ materials have been prepared on SrTiO$_3$ (100) substrate using pulse laser deposition technique. An unexpected onset of interface magnetic…
We investigate how different interface geometries of an Al/Al$_2$O$_3$ junction, a common component of modern tunnel devices, affect electron transport through the tunnel barrier. We study six distinct Al/Al$_2$O$_3$ interfaces which differ…