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This article presents the development of a cost-effective and efficient electronic module for silicon photomultipliers (SiPM). The electronic module combines essential functionalities, such as a high voltage power supply, a preamplifier,…
The electromagnetic interaction between Ag nanoparticles on the top of the Si substrate and the incident light has been studied by numerical simulations. It is found that the presence of a dielectric layer with different thickness leads to…
Supercapacitors store energy via the formation of an electric double layer, which generates a strong electric field at the electrode-electrolyte interface. Unlike conventional metallic electrodes, graphene-derived materials suffer from a…
The spectral addressing of many individual rare-earth dopants in optical resonators offers great potential for realizing distributed quantum information processors. To this end, it is required to understand and control the spectral…
Exploiting 2D materials for spintronic applications can potentially realize next-generation devices featuring low-power consumption and quantum operation capability. The magnetic exchange field (MEF) induced by an adjacent magnetic…
We demonstrate an enhanced emission of high quantum yield molecules coupled to dielectric metasurfaces formed by periodic arrays of polycrystalline silicon nanoparticles. Radiative coupling of the nanoparticles, mediated by in-plane…
We demonstrate the splitting of a low-energy electron beam by means of a microwave pseudopotential formed above a planar chip substrate. Beam splitting arises from smoothly transforming the transverse guiding potential for an electron beam…
Current progress in electro-optical modulation within silicon integrated photonics, driven by the unique capabilities of advanced functional materials, has led to significant improvements in device performance. However, inherent constraints…
A simple and robust electrode insulation technique that can withstand a voltage as high as $\mathrm{1000~V}$, which is equivalent to an electric field strength of $\sim 1MV/m$ across a $\mathrm{10~\mu m}$ channel filled with an electrolyte…
In two-dimensional multivalley semiconductors, at low doping, even a moderate electron-electron interaction enhances the response to any perturbation inducing a valley polarization. If the valley polarization is due to the electron-phonon…
Time-division SQUID multiplexers are used in many applications that require exquisite control of systematic error. One potential source of systematic error is the pickup of external magnetic fields in the multiplexer. We present…
We investigate - both experimentally and theoretically - the inelastic interaction between fast electrons and the electromagnetic field scattered by metallic apertures and nanostructures on dielectric membranes using photon induced…
Semiconducting field emitters present some interesting features (e.g.; self-limited electron emission) for both scientific interest and industrial applications. The analysis of experimental results and device design has been restrained by…
Being one of the strongest materials, ternary TiSiN exhibits a very interesting family of binary transition metal nitride and silicide systems. A novel technique to fabricate morphologically fascinating nano and micro structures of TiSiN is…
In order to build a new concept of photomultiplier based on silicon technology, design and characterization of 5x5 arrays of a new generation of single photon avalanche diodes (SPAD) manufactured by ST-Microelectronics have been performed.…
A field in a homogeneous medium can be amplified or enhanced by inserting closely located perfectly conducting inclusions into the medium. In this paper precise quantitative estimates for such enhancement are derived when the given field is…
The light absorption of [001] grown single-crystalline silicon wafers can be enhanced by chemical etching with potassium hydroxide resulting in a pyramid-like surface texture. Alongside this advantageous property in the context of solar…
We consider quasi-two-dimensional gas of electrons in a typical Si-MOSFET, assuming repulsive contact interaction between electrons. Magnetisation and susceptibility are evaluated within the mean-field approach. Finite thickness of the…
Surface plasmon enhanced processes and hot-carrier dynamics in plasmonic nanostructures are of great fundamental interest to reveal light-matter interactions at the nanoscale. Using plasmonic tunnel junctions as a platform supporting both…
Charge multiplication (CM) in p$^+$n epitaxial silicon pad diodes of 75, 100 and 150 $\upmu$m thickness at high voltages after proton irradiation with 1 MeV neutron equivalent fluences in the order of $10^{16}$ cm$^{-2}$ was studied as an…