Related papers: Sub-Threshold Field Emission from Thin Silicon Mem…
The ability to exfoliate layered materials down to the single layer limit has opened the opportunity to understand how a gradual reduction in dimensionality affects the properties of bulk materials. Here we use this top-down approach to…
We investigate the behavior of quasiparticles in a hybrid electron turnstile with the aim of improving its performance as a metrological current source. The device is used to directly probe the density of quasiparticles and monitor their…
We report amplification of biomolecular recognition signal in lithographically defined silicon nanochannel devices. The devices are configured as field effect transistors (FET) in the reversed source-drain bias region. The measurement of…
We focus on the transmission and reflection coefficients of light in systems involving of topological insulators (TI). Due to the electro-magnetic coupling in TIs, new mixing coefficients emerge leading to new components of the…
A biased tunnel junction between a superconductor and a normal metal can cool the latter electrode. Based on a recently developed cooler with high power and superior performance, we have successfully integrated it with a dielectric silicon…
The development of high-performance multifunctional polymer-based electronic circuits is a major step towards future flexible electronics. Here, we demonstrate a tunable approach to fabricate such devices based on rationally designed…
We propose a filter method to generate electron beams of high polarization from bubble and blow-out wakefield accelerators. The mechanism is based on the idea to identify all electron-beam subsets with low-polarization and to filter them…
This work demonstrates photon emission gain, i.e., emission of multiple photons per injected electron, through impact excitation in Er-doped silicon light-emitting diodes (LEDs). Conventional methods for exciting Er ions in silicon suffer…
Using a simple diagram technique we derive the electric-dipole echo amplitude from two-level systems with a quadrupole nuclear moment in glasses in an external magnetic field. We show, that due to the quadrupole moment interaction of a…
A new type of field emission display(FED) based on an edge-enhance electron emission from metal-insulator-semiconductor (MIS) thin film structure is proposed. The electrons produced by an avalanche breakdown in the semiconductor near the…
The total energy distributions (TEDs) of the emission currents in field emission and surface photofield emission and the overlayer-induced modifications in the surface electronic structures from the technologically important W surfaces with…
Through a combined theoretical and experimental effort, we uncover a yet unidentified mechanism that strengthens considerably electron-phonon coupling in materials where electron accumulation leads to population of multiple valleys. Taking…
We propose a new concept for the design of high-efficiency photocells based on ultra-thin (submicron) semiconductor films of controlled thickness. Using a microscopic model of a thin dielectric layer interacting with incident…
It is found that the electric field can be enhanced strongly inside a permittivity-near-zero object in free space, when the transverse cross section of the object is small and the length along the propagation direction of the incident wave…
Thick Gas Electron Multipliers (THGEMs) have the potential of constituting thin, robust sampling elements in Digital Hadron Calorimetry (DHCAL) in future colliders. We report on recent beam studies of new single- and double-THGEM-like…
Metalenses are optical devices that implement nanostructures as phase shifters to focus incident light. Their compactness and simple fabrication make them a potential cost-effective solution for increasing light collection efficiency in…
Field-emission of electrons underlies major advances in science and technology, ranging from imaging the atomic-scale structure of matter to signal processing at ever-higher frequencies. The advancement of these applications to their…
A seemingly anomalous enhancement of electron mobility in strained silicon inversion layers at high sheet densities has exposed a conspicuous gap between device physics theory and experiment in recent years. We show that the root of this…
We have examined the effects of embedded pitch adapters on signal formation in n-substrate silicon microstrip sensors with data from beam tests and simulation. According to simulation, the presence of the pitch adapter metal layer changes…
The Klein paradox describes an incoming electron being scattered at a supercritical barrier to create electron-positron pairs, a phenomenon widely discussed in textbooks. While demonstrating this phenomenon experimentally with the…