Related papers: Interaction-Induced Strong Localization in Quantum…
A random interaction matrix model is used to study the statistics of conductance peak heights in Coulomb blockade quantum dots. When the single-particle dynamics conserves time-reversal symmetry, the peak height statistics is insensitive to…
We consider a lateral double-dot system in the Coulomb blockade regime with a single spin-1/2 on each dot, mutually coupled by an anti-ferromagnetic exchange interaction. Each of the two dots is contacted by two leads. We demonstrate that…
Coulomb interaction among electrons is found to have profound effects on the electronic properties of anisotropic quantum dots in a perpendicular external magnetic field, and in the presence of the Rashba spin-orbit interaction. This is…
The scanning metallic tip of a scanning force microscope was coupled capacitively to electrons confined in a lithographically defined gate-tunable quantum dot at a temperature of 300 mK. Single electrons were made to hop on or off the dot…
We investigate the effects of Coulomb interaction on charge transfer through a quantum dot attached to a normal and a superconducting lead. While for voltages much larger than the gap we recover the usual result for normal conductors, for…
Symmetric heavy-ion collisions are known to display an `extra-push' effect. That is, the energy at which the s-wave transmission is 0.5 lies significantly higher than the nominal Coulomb barrier. Despite this, however, the capture cross…
We present a complete classification of the electron-electron interaction in chaotic quantum dots based on expansion in inverse powers of $1/M$, the number of the electron states in the Thouless window, $M \simeq k_F R$. This classification…
We determine the contributions from the direct Coulomb and exchange interactions to the total interaction in semiconductor artificial atoms. We tune the relative strengths of the two interactions and measure them as a function of the number…
In a tunneling experiment across a quantum dot it is possible to change the coupling between the dot and the contacts at will, by properly tuning the trasparency of the barriers and the temperature. Gate voltages allow for changes of the…
It is shown that the voltage dependence of the tunneling conductance between two lightly doped semiconductors, which are separated by an large area tunneling barrier, can reveal the high energy part of the Coulomb gap if the barrier is…
The large, level-dependent g-factors in an InSb nanowire quantum dot allow for the occurrence of a variety of level crossings in the dot. While we observe the standard conductance enhancement in the Coulomb blockade region for aligned…
We develop the general non-equilibrium theory of transport through a quantum dot, including Coulomb Blockade effects via a 1/N expansion, where N is the number of scattering channels. At lowest order we recover the Landauer formula for the…
The temperature dependence of Coulomb blockade peak height correlation is used to investigate how adding electrons to a quantum dot alters or "scrambles" its electronic spectrum. Deviations from finite-temperature random matrix theory with…
The time dependent full counting statistics of charge transport through an interacting quantum junction is evaluated from its generating function, controllably computed with the inchworm Monte Carlo method. Exact noninteracting results are…
Interacting electrons in quantum dots with large Thouless number $g$ in the three classical random matrix symmetry classes are well-understood. When a specific type of spin-orbit coupling known to be dominant in two dimensional…
We have detected oscillations of the charge around a potential hill (antidot) in a two-dimensional electron gas as a function of a perpendicular magnetic field B. The field confines electrons around the antidot in closed orbits, the areas…
We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive…
We present an experimental study of the fluctuations of Coulomb blockade peak positions of a quantum dot. The dot is defined by patterning the two-dimensional electron gas of a silicon MOSFET structure using stacked gates. This permits…
Correlations between electrons and the effective dimensionality are crucial factors that shape the properties of an interacting electron system. For example, the onsite Coulomb repulsion, U, may inhibit, or completely block the intersite…
We present measurements on spin blockade in a laterally integrated quantum dot. The dot is tuned into the regime of strong Coulomb blockade, confining ~ 50 electrons. At certain electronic states we find an additional mechanism suppressing…