Related papers: Nanoindentation-Induced Phase Transformation in Si…
Under the inhomogenous stress field set up by nanoindentation, the smaller the extent of the stress field the greater the yield pressure. When the specimen contains a thin layer of softer material, the yield pressure is reduced if…
The effect of substrate was studied using nanoindentation on thin films. Soft films on hard substrate showed more pile up than usual which was attributed to the dislocation pile up at the film substrate interface. The effect of tip blunting…
Surface-functionalized nanomaterials can act as theranostic agents that detect disease and track biological processes using hyperpolarized magnetic resonance imaging (MRI). Candidate materials are sparse however, requiring spinful nuclei…
Ultrafast plasmonics of novel materials has emerged as a promising field of nanophotonics bringing new concepts for advanced optical applications. Ultrafast electronic photoexcitation of a diamond surface and subsequent surface…
The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 - 70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and…
Crystalline Si substrates are doped by laser annealing of solution processed Si. For this experiment, dispersions of highly B-doped Si nanoparticles (NPs) are deposited onto intrinsic Si and laser processed using an 807.5nm cw-laser. During…
Silicon nanowires (SiNWs) attached to a wafer substrate are converted to inversely tapered silicon nanocones (SiNCs). After excitation with visible light, individual SiNCs show a 200-fold enhanced integral band-to-band luminescence as…
Analysis of the mechanical properties of key phases of cementitious systems during hydration at the nanoscale is vital for a better understanding of the type and formation of key cement hydration phases. In this work, nanoindentation…
The use of hyperpolarized agents in magnetic resonance (MR), such as 13C-labeled compounds, enables powerful new imaging and detection modalities that stem from a 10,000-fold boost in signal. A major challenge for the future of the…
Chemical vapour deposition (CVD) grown nanocrystalline diamond is an attractive material for the fabrication of devices. For some device architectures, optimisation of its growth on silicon nitride is essential. Here, the effects of three…
Polycrystalline MgB2 samples with 10 wt % silicon powder addition were prepared by an in-situ reaction process. Two different Si powders, one with coarse (44 mm) and the other with nano-size (<100 nm) particles were used for making samples.…
Recent advances in three-dimensional laser writing have enabled direct nanostructuring deep within silicon, unlocking a volumetric design space previously inaccessible to surface-bound nanophotonic devices. Here, we introduce subwavelength…
Hyperdoping, overcoming the solubility limit of dopants in a crystalline semiconductor, is a fertile method for the enhancement of the electrical, structural and optical devices' performances and for the exploration of exotic phases such as…
We use Raman spectroscopy in tandem with transmission electron microscopy and DFT simulations to show that extreme (GPa) pressure converts the phase of silicon nanowires from cubic (Si-I) to hexagonal (Si-IV) while preserving the nanowire's…
Laser-induced forward transfer (LIFT) printing is a versatile technique to realize micro/nano-scale additive manufacturing of functional materials, including metals and semiconductors. However, the crystallization phenomena during LIFT…
Irradiation of a sharp tungsten tip by a femtosecond laser and exposed to a strong DC electric field led to gradual and reproducible surface modifications. By a combination of field emission microscopy and scanning electron microscopy, we…
Silicon nanocrystals are produced using a two-stage gold ion implantation technique. First stage implantation using low energy ions leads to the formation of an amorphous Si (a-Si) layer. A subsequent high energy Au irradiation in the…
The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) are stud- ied in buried amorphous Si (a-Si) layers in which SPE is not retarded by H. As, P, B and Al profiles were formed by multiple energy ion implantation over a…
We report on the structural properties of highly B-doped silicon (> 2 at. %) realised by nanosecond laser doping. We investigate the crystalline quality, deformation and B distribution profile of the doped layer by STEM analysis followed by…
One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap…