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The Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted…
We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting…
A novel concept of a high-power magnetron transmitter allowing dynamic phase and power control at the frequency of locking signal is proposed. The transmitter compensating parasitic phase and amplitude modulations inherent in…
Intelligent reflecting surfaces (IRSs) have attracted considerable attention because of their ability to dynamically control electromagnetic wave propagation. While most existing IRSs have been developed for low-power communication and…
Single-photon detectors have typically consisted of macroscopic materials where both the photon absorption and transduction to an electrical signal happen. Newly proposed designs suggest that large arrays of nanoscale detectors could…
In this paper, we study single transceiver passive RFID networks by modeling the underlying physical system as a special cascade of a certain broadcast channel (BCC) and a multiple access channel (MAC), using a "nested codebook" structure…
Carbon electronics based on carbon nanotube array field-effect transistors (AFETs) and 2-dimensional graphene field-effect transistors (GFETs) have recently attracted significant attention for potential RF applications. Here, we explore the…
Superconducting field-effect transitor (SuFET) and Josephson field-effect transistor (JoFET) technologies take advantage of electric field induced control of charge carrier concentration in order to modulate the channel superconducting…
Generating non-reciprocal radio frequency transduction plays important roles in a wide range of research and applications, and an aspiration is to integrate this functionality into micro-circuit without introducing magnetic field, which,…
The electron fluid model in plasmonic field effect transistor (FET) operation is related to the behavior of a radio-frequency (RF) cavity. This new understanding led to finding the relationships between physical device parameters and…
Spin field effect transistors (SpinFET) are an iconic class of spintronic devices that exploit gate tuned spin-orbit interaction in semiconductor channels interposed between ferromagnetic source and drain contacts to elicit transistor…
The implementation of on-chip MEMS/NEMS transducers for arbitrary resonators is difficult due to a number of difficulties such as material choice, large dissipation, restriction in high frequency, low sensitivity, poor reliability, and poor…
Radio-Frequency (RF) based device-free Human Activity Recognition (HAR) rises as a promising solution for many applications. However, device-free (or contactless) sensing is often more sensitive to environment changes than device-based (or…
The current-voltage (I-V) characteristics of single-electron transistors (SETs) have been measured in various electromagnetic environments. Some SETs were biased with one-dimensional arrays of dc superconducting quantum interference devices…
A supercurrent transistor is a superconductor-semiconductor hybrid device in which the Josephson supercurrent is switched on and off using a gate voltage. While such devices have been studied using DC transport, radio-frequency measurements…
The concept of the radio-frequency superconducting nanowire single-photon detector (RF-SNSPD) allows frequency-division multiplexing (FDM) of the bias and readout lines of several SNSPDs. Using this method, a multi-pixel array can be…
Recently, deep learning has been successfully applied to the single-image super-resolution (SISR) with remarkable performance. However, most existing methods focus on building a more complex network with a large number of layers, which can…
We report high performance p-type field-effect transistors based on single layered (thickness, ~0.7 nm) WSe2 as the active channel with chemically doped source/drain contacts and high-{\kappa} gate dielectrics. The top-gated monolayer…
A sensor that integrates high sensitivity micro-Hall effect magnetometry and high-frequency electron paramagnetic resonance spectroscopy capabilities on a single semiconductor chip is presented. The Hall-effect magnetometer was fabricated…
A single photoelectron can be trapped and its photoelectric charge detected by a source/drain channel in a transistor. Such a transistor photodetector can be useful for flagging the safe arrival of a photon in a quantum repeater. The…