Related papers: High speed single photon detection in the near-inf…
Integrated photodetectors are essential components of scalable photonics platforms for quantum and classical applications. However, most efforts in the development of such devices to date have been focused on infrared telecommunications…
Silicon single-photon detectors (SPDs) are the key devices for detecting single photons in the visible wavelength range. Here we present high detection efficiency silicon SPDs dedicated to the generation of multiphoton entanglement based on…
The short-wave infrared (SWIR) wavelength, especially 1.55 um, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Avalanche photodiodes (APDs) are a critical component as a…
Silicon single-photon avalanche diode (SPAD) is a core device for single-photon detection in the visible and the near-infrared range, and widely used in many applications. However, due to limits of the structure design and device…
We characterize a new commercial, back-illuminated reach-through silicon single-photon avalanche photo diode (SPAD) SAP500 (Laser Components. Inc.), operated in Geiger-mode for purpose of photon counting. We show that for this sensor a…
We characterize a near-infrared C-RED ONE camera from First Light Imaging (FLI). This camera uses a SAPHIRA electron avalanche photo-diode array (e-APD) from Leonardo (previously Selex). To do so, we developed a model of the signal…
Ultraviolet single-photon detector (UVSPD) provides a key tool for the applications requiring ultraweak light detection in the wavelength band. Here, we report a 4H-SiC single-photon avalanche diode (SPAD) based free-running UVSPD with…
Superconducting nanowire single-photon detectors (SNSPDs) are the current leading technology for the detection of single-photons in the near-infrared (NIR) and short-wave infrared (SWIR) spectral regions, due to record performance in terms…
Spectroscopy of Earth-like exoplanets and ultra-faint galaxies are priority science cases for the coming decades. Here, broadband source flux rates are measured in photons per square meter per hour, imposing extreme demands on detector…
A photon detector combining the two avalanche photon diodes (APD) has been demonstrated for qubit discrimination in 1550 nm. Spikes accompanied with the signals in gated-mode were canceled by balanced output from the two APDs. The spike…
We have performed a detailed study of the dependence of afterpulse probability in InGaAs/InP sine-gated SPAD on the dead time and the existing approach for its implementation. We demonstrated an electrical scheme combining sinusoidal gating…
A measurement system for determining the gain distributions of avalanche photodiodes (APDs) in a low gain range is presented. The system is based on an ultralow-noise charge--sensitive amplifier and detects the output carriers from an APD.…
The single-photon avalanche photodiode(SPAD) has been widely used in research on quantum optics. The afterpulsing effect, which is an intrinsic character of SPAD, affects the system performance in most experiments and needs to be carefully…
Single photon detectors have dark count rates that depend strongly on the bias level for detector operation. In the case of weak light sources such as novel lasers or single-photon emitters, the rate of counts due to the light source can be…
Single photon avalanche diodes (SPADs) are the most commercially diffused solution for single-photon counting in quantum key distribution (QKD) applications. However, the secondary photon emission, arising from the avalanche of charge…
The performance of three types of InGaAs/InP avalanche photodiodes is investigated for photon counting at 1550 nm in the temperature range of thermoelectric cooling. The best one yields a dark count probability of $% 2.8\cdot 10^{-5}$ per…
We have designed, constructed, and tested an InGaAs near-infrared camera to explore whether low-cost detectors can make small (<1 m) telescopes capable of precise (<1 mmag) infrared photometry of relatively bright targets. The camera is…
We present an InGaAs/InP avalanche photodiode with an active quenching circuit on an ASIC (application specific integrated circuit) that is capable of operating in both gated and free-running modes. The 1.6mm2 ASIC chip is fabricated using…
Quantum key distribution (QKD) at telecom wavelengths (1260-1625nm) has the potential for fast deployment due to existing optical fibre infrastructure and mature telecom technologies. At these wavelengths, indium gallium arsenide (InGaAs)…
Recent interest in pile-up mitigation through fast timing at the HL-LHC has focused attention on technologies that now achieve minimum ionising particle (MIP) time resolution of 30 picoseconds or less. The constraints of technical maturity…