Related papers: Gate-induced insulating state in bilayer graphene …
We demonstrate that single layer graphene exhibits the electronic structure of a bilayer when it is connected to two gated bilayers. The energy gap characteristic for gated bilayer is induced in the single layer and it persists for…
Bilayer graphene (BLG) at the charge neutrality point (CNP) is strongly susceptible to electronic interactions, and expected to undergo a phase transition into a state with spontaneous broken symmetries. By systematically investigating a…
This is a theoretical study of electron transport in gated bilayer graphene - a novel semiconducting material with a tunable band gap. It is shown that the which-layer pseudospin coherence enhances the subgap conductivity and facilitates…
We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a…
The absence of an energy gap separating valence and conduction bands makes the low-energy electronic properties of graphene and its multi-layers sensitive to electron-electron interactions. In bilayers, for instance, interactions are…
We explore the electronic ground states of Bernal-stacked multilayer graphenes using the Hartree-Fock mean-field approximation and the full-parameter band model. We find that the electron-electron interaction tends to open a band gap in…
We investigate bilayer graphene transport in the presence of electron-hole puddles induced by long-range charged impurities in the environment. We explain the insulating behavior observed in the temperature dependent conductivity of low…
We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) graphene. The devices show enhanced tendency to current…
The recently observed superconductivity in twisted bilayer graphene emerges from insulating states believed to arise from electronic correlations. While there have been many proposals to explain the insulating behaviour, the…
Graphene is of interest in the development of next-generation electronics due to its high electron mobility, flexibility and stability. However, graphene transistors have poor on/off current ratios because of the absence of a bandgap. One…
A gate induced insulating behavior at zero magnetic field is observed in a high mobility suspended monolayer graphene near the charge neutrality point. The graphene device initially cleaned by a current annealing technique was undergone a…
Bilayer graphene bears an eight-fold degeneracy due to spin, valley and layer symmetry, allowing for a wealth of broken symmetry states induced by magnetic or electric fields, by strain, or even spontaneously by interaction. We study the…
Pristine bilayer graphene behaves in some instances as an insulator with a transport gap of a few meV. This behaviour has been interpreted as the result of an intrinsic electronic instability induced by many-body correlations. Intriguingly,…
We propose that a weakly spontaneous charge-ordered insulating state probably exists in Bernal-stacked bilayer graphene which can account for experimentally observed non-monotonic behavior of resistance as a function of the gated field,…
Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of…
Generating photogalvanic effects in centrosymmetric materials can provide new opportunities for developing passive photodetectors and energy harvesting devices. In this work, we investigate the photogalvanic effects in centrosymmetric…
Metals are commonly used as electrostatic gates in devices due to their abundant charge carrier densities that are necessary for efficient charging and discharging. A semiconducting gate can be beneficial for certain fabrication processes,…
We report the experimental observation of Fabry-P\'erot (FP) interference in the conductance of a gate-defined cavity in a dual-gated bilayer graphene (BLG) device. The high quality of the BLG flake, combined with the device's electrical…
Quantum confined devices that manipulate single electrons in graphene are emerging as attractive candidates for nanoelectronics applications. Previous experiments have employed etched graphene nanostructures, but edge and substrate disorder…
We describe the gated bilayer graphene system when it is subjected to intense terahertz frequency electromagnetic radiation. We examine the electron band structure and density of states via exact diagonalization methods within Floquet…