Related papers: Size-Dependence of the Wavefunction of Self-Assemb…
We address potential deviations of radiation field from the bosonic behaviour and employ local quantum estimation theory to evaluate the ultimate bounds to precision in the estimation of these deviations using quantum-limited measurements…
We present a comprehensive and integrated model-independent ab initio study of the structural, cohesive, electronic, and optical properties of silicon quantum dots of various morphologies and sizes in the framework of all-electron static…
We present time-resolved emission experiments of semiconductor quantum dots in silicon 3D inverse-woodpile photonic band gap crystals. A systematic study is made of crystals with a range of pore radii to tune the band gap relative to the…
The determination of the quantum properties of a single mode radiation field by heterodyne or double homodyne detection is studied. The realistic case of not fully efficient photodetectors is considered. It is shown that a large amount of…
We have determined both the real and imaginary parts of the dielectric polarizability of a single quantum dot. The experiment is based on the observation and the manipulation of Rayleigh scattering at photon frequencies near the resonance…
The number resolution of solid-state artificial atoms is of fundamental interest for the study of quantum few-body systems, yet remains experimentally challenging. Quantum optical experiments offer a non-invasive approach which links up…
We report on a new approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on in-situ cleaved surfaces (cleaved-edge…
We theoretically study the optical properties of an InAs/GaAs quantum dot (QD) near the area of the second-order resonance between an electron confined in the QD and two longitudinal optical phonons. We present the absorption spectra of an…
We calculate the nonequilibrium local density of states on a vibrational quantum dot coupled to two electrodes at T=0 using a numerically exact diagrammatic Monte Carlo method. Our focus is on the interplay between the electron-phonon…
Multi-million atom simulations are performed to study stacking-angle ($\theta$) dependent strain profiles, electronic structure, and polarization-resolved optical modes from [110]-tilted quantum dot stacks (QDSs). Our calculations reveal…
The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy. Observed resonances can be attributed to p-shell…
We consider the problem of characterizing the set of input-output correlations that can be generated by an arbitrarily given quantum measurement. Our main result is to provide a closed-form, full characterization of such a set for any qubit…
A semiconductor quantum dot (QD) can generate highly indistinguishable single-photons at a high rate. For application in quantum communication and integration in hybrid systems, control of the QD optical properties is essential.…
We present a study showing cooperative behavior of light emitting quantum dots at room temperature, with large increases in radiative decay rates and efficiencies, in the presence of small gold nanoparticles (1.5 - 4 nm radii) in low…
In an ideal quantum measurement, the wave function of a quantum system collapses to an eigenstate of the measured observable, and the corresponding eigenvalue determines the measurement outcome. If the observable commutes with the system…
We measure the shot noise of a quantum point-contact using a capacitively coupled InAs double quantum dot as an on-chip sensor. Our measurement signals are the (bidirectional) interdot electronic tunneling rates which are determined by…
The demonstration of isotropic polarization response from semiconductor quantum dots (QDs) is a crucial step towards the design of several optoelectronic technologies. Among many parameters that impact the degree of polarization (DOP) of a…
We investigate the role of quantum confinement on the performance of gas sensors based on two-dimensional InAs membranes. Pd-decorated InAs membranes configured as H2 sensors are shown to exhibit strong thickness dependence, with ~100x…
Quantum networking technologies use spin qubits and their interface to single photons as core components of a network node. This necessitates the ability to co-design the magnetic- and optical-dipole response of a quantum system. These…
We use single self-assembled InGaAs quantum dots as internal probes to map the local density of optical states of photonic crystal membranes. The employed technique separates contributions from non-radiative recombination and spin-flip…