Related papers: Reconfigurable Logic Gates Using Single-Electron S…
The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics…
We review the status of the understanding of single-electron transport (SET) devices with respect to their applicability in metrology. Their envisioned role as the basis of a high-precision electrical standard is outlined and is discussed…
We design and analyze a solid state qubit based on electron spin and controlled by electrical means. The coded qubit is composed of a three-electron complex in three tunable gated quantum dots. The two logical states of a qubit, |0L> and…
We propose and describe a magnetic NanoFabric which provides a route to building reconfigurable spin-based logic circuits compatible with conventional electron-based devices. A distinctive feature of the proposed NanoFabric is that a bit of…
Circuit obfuscation is a frequently used approach to conceal logic functionalities in order to prevent reverse engineering attacks on fabricated chips. Efficient obfuscation implementations are expected with lower design complexity and…
Conventional approaches to fault-tolerant quantum computing realize logical circuits gate-by-gate, synthesizing each gate independently on one or more code blocks. This incurs excess overhead and doesn't leverage common structures in…
We report on a macroscopic version of the single-electron transistor (SET), which we call the soliton tunneling transistor (STT). The STT, consists of a gate capacitor coupled to a NbSe$_{3}$ crystal with a charge density wave (CDW). The…
A peculiarity of the single-electron transistor effect makes it possible to observe this effect even in structures lacking a gate electrode altogether. The proposed method can be useful for experimental study of charging effects in…
We propose a new solid state implementation of a quantum computer (quputer) using ballistic single electrons as flying qubits in 1D nanowires. We use a single electron pump (SEP) to prepare the initial state and a single electron transistor…
We propose an accurate clocked single-spin source for ac-spintronic applications. Our device consists of a superconducting island covered by a ferromagnetic insulator layer through which it is coupled to superconducting leads.…
The newly appeared idea of Logical Stochastic Resonance (LSR) is verified in synthetic gene networks induced by non-Gaussian noise. We realize the switching between two kinds of logic gates under optimal moderate noise intensity by varying…
We have incorporated an aluminum single electron transistor (SET) directly on top of a vertical quantum dot, enabling the use of the SET as an electrometer that is extremely responsive to the motion of charge into and out of the dot. Charge…
Magnonic logic gates represent a crucial step toward realizing fully magnonic data processing systems without reliance on conventional electronic or photonic elements. Recently, a universal and reconfigurable inverse-design device has been…
Spin-gapless semiconductors (SGSs) are a promising class of materials for spintronic applications, enabling functions beyond conventional electronics. This study introduces a novel design for multifunctional spintronic field-effect…
A new magnetic logic overcomes the major limitations of field programmable gate arrays while having a 50% smaller unit cell than conventional designs utilizing magnetic tunnel junctions with one Heusler alloy electrode. These show positive…
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate…
We study transport of spin-polarized electrons through a magnetic single-electron transistor (SET) in the presence of an external magnetic field. Assuming the SET to have a nanometer size central island with a single electron level we find…
Spin-orbit torque is a promising mechanism for writing magnetic memories, while field-effect transistors are the gold-standard device for logic operation. The spin-orbit torque field effect transistor (SOTFET) is a proposed device that…
Memristors are low-power memory-holding resistors thought to be useful for neuromophic computing, which can compute via spike-interactions mediated through the device's short-term memory. Using interacting spikes, it is possible to build an…
A rotation-based synthesis framework for reversible logic is proposed. We develop a canonical representation based on binary decision diagrams and introduce operators to manipulate the developed representation model. Furthermore, a…