Related papers: High-temperature PbTe diodes
We have investigated the superconducting properties in a single crystal of a new superconductor Pb$_{2}$Pd via various techniques including magnetization, AC transport, transverse field muon spin rotation and relaxation (TF-$\mu$SR), and…
The transport properties of superconducting single crystal Pb nanowires of 55 nm and 70 nm diameter are studied by standard four electrodes method. Resistance-temperature (R-T) scans and magneto-resistance (R-H) measurements show a series…
The specific heat $C(T)$ of BaFe$_2$As$_2$ single crystal, electron-doped Ba$_{0.7}$La$_{0.3}$Fe$_2$As$_2$ and hole-doped Ba$_{0.5}$K$_{0.5}$Fe$_2$As$_2$ polycrystals were measured. For undoped BaFe$_2$As$_2$ single crystal, a very sharp…
Electrical current rectification is an interesting electronic feature, popularly known as a diode. Achieving a high rectification ratio in a molecular junction has been a long-standing goal in molecular electronics. The present work…
Technological progress in electronics usually requires their use in increasingly aggressive environments, such as rapid thermal cycling and high power density. Thermal diodes appear as excellent candidates to thermally protect critical…
Ga2O3 Schottky barrier diodes featuring a field plate and a composite SiO2/SiNx dielectric layer beneath the field plate were fabricated, achieving a breakdown voltage of 2.4 kV at room temperature. Electrical performance and degradation…
In the substitutionally disordered narrow-gap semiconductor Pb_{1-x}Ge_xTe, a finite-temperature cubic-rhombohedral transition appears above a critical concentration $x \approx 0.005$. As a first step towards a first-principles…
This paper presents a fully-integrated CMOS temperature sensor for densely-distributed thermal monitoring in systems on chip supporting dynamic voltage and frequency scaling. The sensor front-end exploits a sub-threshold PMOS-based circuit…
We present a technique based on high resolution imaging to measure the absolute temperature and the heating rate of a single ion trapped at the focus of a deep parabolic mirror. We collect the fluorescence light scattered by the ion during…
The $\beta$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in $\beta$-Ga$_2$O$_3$ has…
Metallic transition metal dichalcogenides (TMDs) have exhibited various exotic physical properties and hold the promise of novel optoelectronic and topological devices applications. However, the synthesis of metallic TMDs is based on…
Understanding the phase behavior of semiconductor materials is important for applications in solid state physics and nanoscience. Accurate experimental data is often difficult to obtain due to strong kinetic effects. In this work, we…
Operation of semiconductor scintillators requires optically-tight integration of the photoreceiver system on the surface of the scintillator slab. We have implemented an efficient and fast quaternary InGaAsP pin photodiode, epitaxially…
A description of an edge-biasing experiment conducted on the SPECTOR (Spherical Compact Toroid) plasma injector is presented, along with initial results. The insertion of a disc-shaped molybdenum electrode (probe), biased at up to +100V,…
Semiconductor devices are notoriously difficult to simulate at deep-cryogenic temperatures. The lowest temperature that can be simulated today in commercial TCAD is around 4.2 K, possibly 100 mK, while most experimental quantum science is…
Electron Holographic Tomography was used to obtain 3-dimensional reconstructions of the morphology and electrostatic potential gradient of axial GaInP/InP nanowire tunnel diodes. Crystal growth was carried out in two opposite directions:…
Planar light-emitting diodes (LEDs) fabricated within a single high-mobility quantum well are demonstrated. Our approach leads to a dramatic reduction of radiative lifetime and junction area with respect to conventional vertical LEDs,…
Pb$_{0.77}$Sn$_{0.23}$Se is a novel alloy of two promising thermoelectric materials PbSe and SnSe that exhibits a temperature dependent band inversion below 300 K. Recent work has shown that this band inversion also coincides with a trivial…
Here, we report the full-fledged journey towards the material synthesis and characterization of few-layered/thin WSe$_2$ using sputtered W-films on SiO$_2$/Si substrates followed by electrical studies under dark and illumination conditions.…
Rectification of heat flow via a thermal diode is not only of fundamental interest, but can also enable a range of novel applications in thermal management and energy conversion. However, despite decades of extensive research, large…