Related papers: High-temperature PbTe diodes
Highly sensitive photodetectors with single photon level detection is one of the key components to a range of emerging technologies, in particular the ever-growing field of optical communication, remote sensing, and quantum computing.…
n-TPA-IFA organic material was synthesized and deposited on p-Si by spin coating method to produce n-TPA-IFA/p-Si heterojunction diode. We determined that the dielectric constant and energy band gap of TPA-IFA organic material were 3.91 and…
Flexible fully transparent diodes with high rectification ratio of 5 e 8 are fabricated with all oxide materials at low temperature. The devices are optically transparent in visible spectra range and electrically robust while mechanically…
The superconducting diode effect (SDE) is defined by the difference in the magnitude of critical currents applied in opposite directions. It has been observed in various superconducting systems and attracted high research interests.…
We report results of low-temperature thermodynamic and transport measurements of Pb_{1-x}Tl_{x}Te single crystals for Tl concentrations up to the solubility limit of approximately x = 1.5%. For all doped samples, we observe a…
In the present work, we report the synthesis of Pb-Bi alloy with enhanced Tc of up to 9K, which is higher than that of Pb. The alloy is synthesized via a solid-state reaction route in the vacuum-encapsulated quartz tube at 7000C in an…
Thin films of hydrogenated amorphous carbon (a-C:H) deposited by radio frequency plasma-enhanced chemical vapour deposition (rf-PECVD) have been studied for various applications. An interesting property of these films is their high…
GaAs Schottky diode detectors have been fabricated upon Low Pressure Vapour Phase Epitaxial GaAs. The devices were characterised before and after a $1.25 \times 10^{14}$~cm$^{-2}$ 24GeV/c proton fluence. The as fabricated Ti-GaAs barrier…
This work reports on a steady-state thermal analysis of a 160 GHz balanced quadrupler, based on a quasi-vertical varactor Schottky diode process, for high power applications. The chip is analyzed by solving the heat equation via the 3D…
We investigate the possibility to obtain a thermal diode with functionally graded Si-Ge alloys. A wire with variable section is considered. After the introduction of a formula giving the thermal conductivity of the wire as a function of the…
The small silicon chip of Schottky diode (0.8x0.8x0.4 mm3) with planar arrangement of electrodes (chip PSD) as temperature sensor, which functions under the operating conditions of pressure sensor, was developed. The forward I-V…
The p-n junction constructed from the group-10 TMDCs, or namely, transition metal dichalcogenides with an intrinsic layered structure, is not considerably reported. This study presents a mechanical exfoliation-based technique to prepare…
We describe and experimentally implement a single-ion local thermometry technique with absolute sensitivity adaptable to all laser-cooled atomic ion species. The technique is based on the velocity-dependent spectral shape of a quasi-dark…
Accurate and precise measurements of spectroradiometric temperature are crucial for many high pressure experiments that use diamond anvil cells or shock waves. In experiments with sub-millisecond timescales, specialized detectors such as…
Single crystals of In-doped PbBi2Te4 are synthesized via a conventional solid-state method. Chemical analysis and hall measurements indicate that In replaces Pb, introducing n-type carriers, creating Pb1-xInxBi2Te4. A superconducting…
A high temperature superconducting detector was fabricated to capture the thermal images in room temperature background. The detector was made of YBa2Cu3O7-{\delta} (YBCO) superconducting thin film deposited on an Yttria Stabilized Zirconia…
Vertical $pn$ heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped $p$-type SnO layers with hole concentrations ranging from $p=10^{18}$ to $10^{19}$cm$^{-3}$ on unintentionally-doped…
Results of the measurements of thermoelectric properties of thin semiconductor microwires of Pb1-xTlxTe (x=0,001-0,02, d=5-100mkm) in the temperature region 4,2-300 K, which were obtained from solution melt by the filling of the quartz…
${\beta}$-Ga${_2}$O${_3}$ based semiconductor devices are expected to have significantly improved high-power and high-temperature performance due to its ultra-wide bandgap of close to 5 eV. However, the high-temperature operation of these…
Bromothymol blue (BTB) with the molecular formula of C27H28Br2O5S was grown onto p-Si substrate to fabricate heterojunction by spin coating technique. The current voltage (I-V) measurements of diode were carried out in dark and under…