Related papers: Spin current and electrical polarization in GaN do…
Coherent spin-dependent transport through a junction containing of Normal/Ferromagnetic/Normal bilayer graphene nanoribbon with zigzag edges is investigated by using Landauer formalism. In a more realistic set-up, the exchange field is…
We investigated the influence of n+-GaAs thickness and doping density of GaMnAs/n+-GaAs Esaki tunnel junction on the efficiency of the electrical electron spin injection. We prepared seven samples of GaMnAs/n+-GaAs tunnel junctions with…
The large electronic polarization in III-V nitrides allow for novel physics not possible in other semiconductor families. In this work, interband Zener tunneling in wide-bandgap GaN heterojunctions is demonstrated by using…
We examine the effect a spatially non-uniform spin current with a component polarized partially out of the plane has on a low saturation magnetization nanomagnet free layer. Micromagnetic simulations indicate that the spin torque efficiency…
A new mechanism different from the spin accumulation picture is proposed for the current induced magnetization switching in magnetic tunnel junctions by taking into account the effect of the electron electron interaction. We found in tunnel…
Employing first-principles calculations, we investigate efficiency of spin injection from a ferromagnetic (FM) electrode (Ni) into graphene and possible enhancement by using a barrier between the electrode and graphene. Three types of…
In this paper, a 3-terminal spin-transfer torque nano-oscillator (STNO) is studied using the concurrent spin injection of a spin-polarized tunneling current and a spin Hall current exciting the free layer into dynamic regimes beyond what is…
We derive an expression for the spin-current through a tunnel barrier in terms of many-body Green's functions. The spin current has two contributions. One can be associated with angular-momentum transfer by spin-polarized charge currents…
The spin-dependent mobility for the lateral transport of the hole gas in a GaMnAs/GaAs heterostructure containing several metallic-like ferromagnetic layers is calculated. The electronic structure is obtained self-consistently taking into…
We fabricated a non-local spin valve device with Co-MgO injector/detector tunnel contacts on a graphene spin channel. In this device, the spin polarization of the injector contact can be tuned by both the injector current bias and the gate…
We studied orientation dependent transport in vicinal N-polar AlGaN/GaN heterostructures. We observed significant anisotropy in the current carrying charge parallel and perpendicular to the miscut direction. A quantitative estimate of the…
Two-dimensional structures that exhibit intriguing magnetic phenomena such as perpendicular magnetic anisotropy and switchable magnetization are of great interests in spintronics research. Herein, the density-functional theory studies…
Nonlocal spin polarization phenomena are thoroughly investigated in the devices made of chiral metallic single crystals of CrNb$_3$S$_6$ and NbSi$_2$ as well as of polycrystalline NbSi$_2$. We demonstrate that simultaneous injection of…
Anomalous and spin Hall effects are investigated theoretically for a magnetic tunnel junction where the applied voltage produces a Rashba spin-or bit coupling within the tunneling barrier layer. The ferromagnetic electrodes are the source…
We propose a device concept, based on monolayer stanene, able to provide highly polarized spin currents (up to a $98\%$) with voltage-controlled spin polarization operating at room temperature and with small operating voltage ($0.3$ V). The…
Recently, the chiral-induced spin selectivity in molecular systems has attracted extensive interest among the scientific communities. Here, we investigate the effect of the gate voltage on spin-selective electron transport through the…
Implementing spin functionalities in Si, and understanding the fundamental processes of spin injection and detection, are the main challenges in spintronics. Here we demonstrate large spin polarizations at room temperature, 34% in n-type…
By the insertion of thin InGaN layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed…
We investigate the tunnelling between an electronic gas with two different velocities $V_\uparrow \neq V_\downarrow$ and a regular metal. We find that at the interface between the two systems that the tunnelling conductance for spin up and…
We propose two new approaches for regulating spin polarization and spin inversion in a conducting junction within a tight-binding framework based on wave-guide theory. The system comprises a magnetic quantum ring with finite modulation in…