Related papers: An Improved Process for Fabricating High-Mobility …

Candidates compounds for new thermoelectric and superconducting materials, which have narrow band gap and flat bands near band edges, were exhaustively searched by a high-throughput first-principles calculation from an inorganic materials…

Thick metamorphic buffers are perceived to be indispensable for the heteroepitaxial integration of III-V semiconductors on silicon substrates with large thermal expansion and lattice mismatches. However, III-nitride buffers in conventional…

III-V heterostructure based high electron mobility transistors (HEMTs) offer superior performance as compared to CMOS silicon transistors owing to the high mobility in the 2D electron gas (2DEG) channel at the heterostructure interface.…

We show that simple, commercially sourced n-channel silicon field-effect transistors (nFETs) operating under closed loop control exhibit an ~3-fold improvement in pH readout resolution to (7.2+/-0.3)x10^-3 at a bandwidth of 10 Hz when…

Optomechanical crystals (OMCs) enable coherent interactions between optical photons and microwave acoustic phonons, and represent a platform for implementing quantum transduction between microwave and optical signals. Optical…

Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing significant limitations as device scaling reaches the limits of Moore's Law. These…

Since the 1960's when Gordon Moore proposed that the transistor density in our electronic devices should double every two years while the cost is halved, the semiconductor industry has taken this statement to heart. Over the last few…

The influence of substrate treatment with self-assembled monolayers and thermal annealing was analysed by electrical and structural measurements on field-effect transistors (FETs) and metal-insulator-semiconductor (MIS) diodes using…

High-mobility field effect transistors can serve as resonant detectors of terahertz radiation due to excitation of plasmons in the channel. The modeling of these devices previously relied either on approximate techniques, or complex…

Next generation cosmic microwave background (CMB) polarimetry experiments aim to deploy order 500,000 detectors, requiring repeatable and reliable fabrication process with stable and uniform transition edge sensor (TES) bolometer…

To realize the full spectrum of advantages that the III-nitride materials system offers, the demonstration of p-channel III-nitride based devices is valuable. Authors report the first p-type field effect transistor (pFET) based on an…

We demonstrate ferroelectric (FE) memory transistors on a crystalline silicon channel with endurance exceeding $10^{10}$ cycles. The ferroelectric transistors (FeFETs) incorporate a high-$\kappa$ interfacial layer (IL) of thermally grown…

Atomically thin semiconductors have versatile future applications in the information and communication technologies for the ultimate miniaturization of electronic components. In particular, the ongoing research demands not only a…

We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 nanoribbons using low etching (RF) power allowing very good…

We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2, the mobility is 30-60 cm2/Vs, relatively…

We report the design and performance of a non-magnetic drift stable optically pumped cesium magnetometer with a measured sensitivity of 35 fT at 200 s integration time and stability below 50 fT between 70 s and 600 s. To our knowledge this…

The advances in micro-size and in-plane supercapacitors lead to produce the miniaturizing energy storage devices in portable and bendable electronics. Micro-supercapacitors have unique electrochemical performance, such as high power…

Vertical field effect transistors (VFETs) show many advantages such as high switching speed, low operating voltage, low power consumption, and miniaturization over lateral FETs. However, VFET still faces the main challenges of high…

We present a two-dimensional electron heterostructure field effect device of simplistic design and ease of fabrication that displays high mobility electron transport. This is accomplished using a high efficacy contacting scheme and simple…

We report on the growth by evaporation under high vacuum of high-quality thin films of Fe(phen)2(NCS)2 (phen=1,10-phenanthroline) that maintain the expected electronic structure down to a thickness of 10 nm and that exhibit a…